Workshop on Active Matrix Displays


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Workshop on Active Matrix Displays

date time session room

Wed., Nov. 27 13:40-15:15 AMD1 Foldable Technology of OLED Displays Mid-sized Hall B

15:20-16:45 AMD2 High Resolution Display

17:00-18:35 AMD3 Driving Technology of Micro/Mini LED Displays
Special Topics of Interest on Micro/Mini LEDs

Thu., Nov. 28 9:00-10:20 AMD4 Emerging TFTs

10:40-13:10 AMDp1 Oxide TFTs Main Hall

14:30-17:00 AMDp2 Active-Matrix Devices

Fri., Nov. 29 9:00-10:30 AMD5 Oxide TFT: Device Fundamentals Mid-sized Hall B

10:40-12:15 AMD6 Oxide TFT: Device Application

13:20-14:40 AMD7 Oxide TFT: Fabrication Process

15:00-16:25 AMD8 Advanced Driving Technology for High-quality Display

AMD1 : Foldable Technology of OLED Displays

Wed., Nov. 27  13:40-15:15  Mid-sized Hall B

Chair: Koichi Miwa (LG Display Co.,Ltd)
Co-Chair: Keisuke Omoto (Apple)

AMD1-1 Invited Development of Foldable AMOLED Displays Based on Neutral-Plane Splitting Concept
*Masumi Nishimura¹, Kisako Takebayashi¹, Masatomo Hishinuma¹, Hajime Yamaguchi¹, Akio Murayama¹ (1. Japan Display Inc. (Japan))

AMD1-2 Invited Ubiquitous Display, The Golden Age of OLED
*Chenggong Wang¹, Zhibo Yao¹, Yifan Liu¹, Xianrui Qian¹, Jiye Xia¹ (1. Visionox Technology Inc (China))

AMD1-3 Withdrawn

AMD1-4 Positive Bias-Stress Stability of Flexible Amorphous InGaZnO Thin Film Transistors with Double-Stacked Gate Insulators
*Chengyuan Dong¹, Guochao Liu¹, Ying Zhang¹, Guofeng Feng¹, Wen Zhang¹ (1. Shanghai Jiao Tong University (China))

AMD1-5L Stretchable Oxide TFTs on PI/SEBS Substrate
*Chanju Park¹, Suhui Lee¹, Jin Jang¹ (1. Kyung Hee University (Korea))

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AMD2 : High Resolution Display

Wed., Nov. 27  15:20-16:45  Mid-sized Hall B

Chair: Junichi Takeya (University of Tokyo)
Co-Chair: Hiroki Hamada (Kindai Univ.)

AMD2-1 Invited Development of 88-inch 120Hz 8K OLED TV for Mass Production
*Koichi Miwa¹, Hyun-Haeng Lee¹, Seong-Eok Han¹, Yong-Joon Heo¹, Du-Hwan Oh¹, Shin-Kyun Park¹ (1. LG Display Co., Ltd. (Korea))

AMD2-2 Invited 5291 ppi OLED Display with C-Axis Aligned Crystalline Oxide Semiconductor
*Shuichi Katsui¹, Hidetomo Kobayashi¹, Takashi Nakagawa¹, Yuki Tamatsukuri¹, Hideaki Shishido¹, Shogo Uesaka¹, Ryohei Yamaoka¹, Takaaki Nagata¹, Tomoya Aoyama¹, Yutaka Okazaki¹, Takayuki Ikeda¹, Shunpei Yamazaki¹ (1. Semiconductor Energy Laboratory Co., Ltd. (Japan))

AMD2-3 Novel Compensation Pixel Circuit with Simultaneous Emission Driving Scheme for High-Resolution AMOLED Displays
*Jui-Hung Chang¹, Chin-Hsien Tseng¹, Sung-Chun Chen¹, Chih-Lung Lin¹ (1. National Cheng Kung University (Taiwan))

AMD2-4L 75-inch LCD Displays with AM MiniLED Local Dimming Backlight Units on Glass
Juncheng Xiao¹, *Jiayang Fei¹, Hongyuan Xu¹, Yongyuan Qiu¹, Quansheng Liu¹, Yong Yang¹, Junling Liu¹, Jiaqing Zhuang¹, Chunming Liu¹, Daobing Hu¹, Xin Zhang¹ (1. Shenzhen China Star Optoelectronics Technology Co., Ltd (China))

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AMD3 : Driving Technology of Micro/Mini LED Displays
Special Topics of Interest on Micro/Mini LEDs

Wed., Nov. 27  17:00-18:35  Mid-sized Hall B

Chair: Kazumasa Nomoto (Sony)
Co-Chair: Keisuke Omoto (Apple)

AMD3-1 Invited Crystal LED Display System for Immersive Viewing Experience
*Katsuhiro Tomoda¹, Norifumi Kikuchi¹, Goshi Biwa^2,1, Hisashi Kadota^1,2 (1. Sony Semiconductor Solutions Corporation (Japan), 2. Sony Corporation (Japan))

AMD3-2 Invited Active Matrix Driving Mini-LED Device
*Chin-Lung Ting¹, Chung-Kuang Wei¹, Li-Wei Mau¹, Ker-Yih Kao¹, Ho-Tien Chen¹, Minoru Shibazaki² (1. Innolux Corporation (Taiwan), 2. Innolux Japan (Japan))

AMD3-3 Invited A 200-ppi Full Color Active Matrix Micro-LED Display with Low-Temperature-Poly-Silicon TFT Backplane
*Masaya Tamaki¹, Sho Nakamitsu¹, Hiroaki Ito¹, Takanobu Suzuki¹, Masahiko Nishide¹, Kunio Imaizumi¹, Katsumi Yamanoguchi¹, Fanny Rahadian¹, Katsumi Aoki¹, Seiji Matsuda¹, Ryoichi Yokoyama¹ (1. Kyocera Corporation (Japan))

AMD3-4 Active Matrix Monolithic Full-Color LED Micro Display
*Longheng Qi¹, Xu Zhang¹, Wing Cheung Chong¹, Peian Li¹, Chak Wah Tang¹, Kei May Lau¹ (1. The Hong Kong University of Science and Technology (Hong Kong))

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AMD4 : Emerging TFTs

Thu., Nov. 28  9:00-10:20  Mid-sized Hall B

Chair: Hyun Jae Kim (Yonsei Univ.)
Co-Chair: Yosei Shibata (Tohoku Univ.)

AMD4-1 Invited Active-Matrix Driven Flexible Mini-LED Displays Based on High-Performance Organic Single-Crystal TFTs
*Jun Takeya^1,2 (1. The University of Tokyo (Japan), 2. Organo-Circuit Inc. (Japan))

AMD4-2 Invited Printing of 3D Electronic Circuits and Organic Thin-Film Transistors
*Takeo Minari¹, Qingqing Sun¹, Wanli Li¹, Xuying Liu², Masayuki Kanehara³ (1. National Institute for Materials Science (NIMS) (Japan), 2. Zhengzhou University (China), 3. C-INK Co., Ltd. (Japan))

AMD4-3 Withdrawn

AMD4-4L Integrated Polycrystalline Silicon Photomask Technology for Low-Temperature Polycrystalline Silicon (LTPS) TFTs
*Jia-Hong Ye¹, Ching-Liang Huang¹, Kuo-Yu Huang¹, Maw-Song Chen¹, Wen-Ching Tsai¹, Wei-Ming Huang¹, Yang-An Wu¹ (1. AUO (Taiwan))

AMD4-5L Improving Performances of Oxide Phototransistors Using a Mechano-Chemically Treated Porous Structure as The Visible Light Absorption Layer
*I Sak Lee¹, Bennet Nii Akwei Brown², Dongwoo Kim¹, Sujin Jung¹, Byung Ha Kang¹, Hyun Jae Kim¹ (1. Yonsei University (Korea), 2. Columbia University (United States of America))

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AMD5 : Oxide TFT: Device Fundamentals

Fri., Nov. 29  9:00-10:30  Mid-sized Hall B

Chair: Kazumasa Nomoto (Sony)
Co-Chair: Hideya Kumomi (Tokyo Tech)

AMD5-1 Invited Switching Characteristic Enhancement of P-type Cu₂O TFTs
Dongwoo Kim¹, I Sak Lee¹, Sujin Jung¹, Sung Min Rho¹, *Hyun Jae Kim¹ (1. Yonsei University (Korea))

AMD5-2 Invited High Mobility Metal-Oxide Devices for Display SoP and 3D Brain-Mimicking IC
*Albert Chin¹, Te Jui Yen¹, Cheng Wei Shih¹, You-Da Chen¹ (1. National Chiao Tung University (Taiwan))

AMD5-3 High Mobility Oxide TFT Based on In-rich In-Ga-Sn-O Semiconductors with Nanocrystalline Structures
*XUERU MEI², HUAFEI XIE¹, NIAN LIU², MACAI LU², Lei Wen², Shujhih Chen², Shengdong Zhang², Chiayu Lee², Xin Zhang² (1. Peking University (China), 2. Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd (China))

AMD5-4 Simulation Study of Self-Heating and Edge Effects on Oxide-Semiconductor TFTs: Channel-Width Dependence
*Katsumi Abe¹, Kazuki Ota¹, Takeshi Kuwagaki¹ (1. Silvaco Japan Co., Ltd. (Japan))

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AMD6 : Oxide TFT: Device Application

Fri., Nov. 29  10:40-12:15  Mid-sized Hall B

Chair: Chuan Liu (Sun Yat-sen University)
Co-Chair: Susumu Horita (JAIST)

AMD6-1 Invited High Performance Short Channel Oxide TFTs for Transparent Top Emission OLED TVs
*Chanki Ha¹, Eunah Heo¹, Wonbeom Yoo¹, Heungjo Lee¹, Keun-Yong Ban¹, Jonguk Bae¹, Jongwoo Kim¹ (1. LG Display (Korea))

AMD6-2 Invited Development of High Mobility Top Gate IGZO-TFT for Automotive OLED Display
*Yujiro Takeda¹, Aman Mehadi¹, Shogo Murashige¹, Kazuatsu Ito¹, Izumi Ishida¹, Shinji Nakajima¹, Hiroshi Matsukizono¹, Naoki Makita¹ (1. SHARP Corporation (Japan))

AMD6-3 Invited Top-Gate Oxide TFTs with Ion-Implanted Source/Drain Regions in Advanced LTPS Technology
*Isao Suzumura¹, Toshihide Jinnai¹, Hajime Watakabe¹, Akihiro Hanada¹, Ryo Onodera¹, Tomoyuki Ito¹ (1. Japan Display Inc. (Japan))

AMD6-4 Fabrication of Top-Gate Self-Aligned Amorphous InGaSnO TFTs with High Mobility
*Nian Liu¹, Huafei Xie², Xueru Mei¹, Macai Lu¹, Lei Wen¹, Shujhih Chen¹, Shengdong Zhang², Chiayu Lee¹, Xin Zhang¹ (1. Shenzhen China Star Optoelectronics Semiconductor Display Technology Co.Ltd., China (China), 2. School of Electronic and Computer Engineering, Peking University, Shenzhen, China (China))

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AMD7 : Oxide TFT: Fabrication Process

Fri., Nov. 29  13:20-14:40  Mid-sized Hall B

Chair: Toshiaki Arai (JOLED Inc.)
Co-Chair: Yujiro Takeda (Sharp)

AMD7-1 Invited Nanostructured IGZO Thin-Film Transistors with Remarkably Enhanced Current Density and On-Off Ratio
Kairong Huang¹, *Chuan Liu¹ (1. Sun Yat-sen University (China))

AMD7-2 Effect of Lanthanum Doping on the Electrical Performance of Spray Coated ZnO Thin Film Transistor
*RAVINDRA NAIK BUKKE¹, NARENDRA NAIK MUDE, JEWEL KUMER SAHA, YOUNGOO KIM, JIN JANG (1. KYUNG HEE UNIVERSITY (Korea))

AMD7-3 Highly Stable High Mobility Top-gate Structured Oxide TFT by Supplying Optimized Oxygen and Hydrogen to Semiconductors
*Jong Beom Ko¹, Seung-Hee Lee¹, Sang-Hee Ko Park¹ (1. Korea Advanced Institute of Science and Technology (Korea))

AMD7-4L Low-Temperature IGZO Technology on Transparent Plastic Foil by Atmospheric Spatial Atomic Layer Deposition
Corné Frijters^1,2, Roy Verbeek¹, Gerard de Haas¹, Tung Huei Ke³, Erwin Vandenplas³, Marc Ameys³, Jan-Laurens van der Steen¹, Gerwin Gelinck^1,4, Eric Meulenkamp¹, Paul Poodt^1,2, Auke Kronemeijer¹, *Ilias Katsouras¹ (1. TNO/Centre (Netherlands), 2. SALDtech B.V. (Netherlands), 3. imec (Belgium), 4. Eindhoven University of Technology (Netherlands))

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AMD8 : Advanced Driving Technology for High-quality Display

Fri., Nov. 29  15:00-16:25  Mid-sized Hall B

Chair: Masahide Inoue (Huawei Techs. Japan)
Co-Chair: Isao Suzumura (Japan Display Inc.)

AMD8-1 Invited High Performance Oxide TFT Technology for Med.-Large Size OLED Displays
*Toshiaki Arai¹ (1. JOLED Inc. (Japan))

AMD8-2 A 6T1C Dynamic Threshold Voltage Compensation IGZO-GOA Circuit for 31-inch AMOLED Display with Slim Border
*Yan Xue^1,2, Baixiang Han¹, Xian Wang¹, Shuai Zhou¹, Gary Chaw¹, Chun-Hsiung Fang¹, Yuan-Chun Wu¹ (1. CSOT (China), 2. Peiking university (China))

AMD8-3 New 3.5T2C Pixel Circuit with Symmetrical Structure for 3D AMOLED Displays
*Chieh-An Lin¹, Li-Jung Chen¹, Chia-Ling Tsai¹, Chih-Lung Lin¹ (1. National Cheng Kung University (Taiwan))

AMD8-4 A Novel OLED Pixel Circuit with Controllable Threshold Voltage Compensation Time
*Jung Chul Kim¹, Seonghwan Hong¹, Sujin Jung¹, Mihee Sin², Jun Suk Yoo², Han Wook Hwang², Yong Min Ha², Hyun Jae Kim¹ (1. Yonsei University (Korea), 2. LG Display, Ltd. (Korea))

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Poster AMDp1 : Oxide TFTs

Thu., Nov. 28  10:40-13:10  Main Hall

AMDp1-1 Improvement in Carrier Mmobility of ZnON Transistor by Tantalum Encapsulation
*Minjae Kim¹, Jae Kyeong Jeong¹ (1. Hanyang Univ. (Korea))

AMDp1-2 Withdrawn

AMDp1-3 Withdrawn

AMDp1-4 Stable and High-Mobility Oxide TFTs Using Low-Temperature Processed ZTO/IZO Stacked Channels
*Tsubasa Moritsuka¹, Hiroyuki Uchiyama¹ (1. Hitachi, Ltd. (Japan))

AMDp1-5 Transfer Characteristics of H_₂O_₂-Doped ZrInZnO Thin Film Transistors
*Sangmin Lee¹, Bohyeon Jeon¹, Byoungdeog Choi¹ (1. Sungkyunkwan University (Korea))

AMDp1-6 Study on the Influence Factors of ESD Defect for a-IGZO TFT
*Ding Yuan Li¹, Ru Wang Guo¹, Tian Zhen Liu¹, Xian Xue Duan¹, Sang Jin Kim¹, Sang Soo Park¹, Ming Ming Chu¹, Xin Hong Chen¹, Li Li Wei¹, Hai Feng Chen¹, Wei Fang¹ (1. BOE HF (China))

AMDp1-7 Study on Promoting Transmittance on Dielectric Multi-layers for IGZO LCD Displays
*Ningbo Yi^1,2, Lixia Li², Sibang Long², Sen Yan², Feng Zhao² (1. Peking University Shenzhen Graduate School (China), 2. Shenzhen China Star Optoelectronics Technology Co., LTD (China))

AMDp1-8 Characteristics of Top-Gate Self-Aligned Oxide A-IGZO TFT with Copper Light Shield LayerCharacteristics of Top-Gate Self-Aligned Oxide A-IGZO TFT with Copper Light Shield Layer
*Qian Ma^1,2, Xingyu Zhou², YuanJun Hsu², Yuanchun Wu² (1. Peking University Shenzhen Graduate School (China), 2. Shenzhen China Star Optoelectronics Technology Co., LTD (China))

AMDp1-9 Fluorine-Doped Indium Gallium Zinc Oxide Thin-Film Transistors Fabricated via Solution Process
*Donghee Choi¹, Byoungdeog Choi¹ (1. University of Sungkyunkwan (Korea))

AMDp1-10 Analysis and Solution of 4/5/6 levels related Issues in a-IGZO TFT Gate Driving Circuits for 32-in FHD TFT-LCD
*suping xi¹, tianhong Wang¹, longqiang Shi¹, yifang chou¹, shiming Ge¹, chuhong Dai¹, jiajia Yu¹, Liang Hu¹, Jiang Zhu¹, wei Shao¹ (1. China Star Optoelectronics Technology (China))

AMDp1-11 Investigation of Hump Phenomenon in a-IGZO Thin-Film Transistors under Positive Bias Stress
*Xinlv Duan¹ (1. Institute of Microelectronics of the Chinses Academy of Sciences (China))

AMDp1-12 Withdrawn

AMDp1-13 High-Mobility and High-Reliability Top-Gate Self-Aligned IGZO TFTs with Incorporate High Density Passivation Layer (HDP) after PV deposition
*Peng Zhang^1,2, Guo Zhen Lin^1,2, Ning Shu Zhao^1,2, Tao Le Zhang^1,2,3, Jun Yuan Hsu^1,2, Bo Jiang Yao^2,1 (1. Shenzhen China Star Optoelectronics Technology Co., Ltd. (China), 2. National Engineering Laboratory for AMOLED Process Technology (China), 3. School of Electronic and Computer Engineering, Shenzhen Graduate School, Peking University (China))

AMDp1-14 Effect of Mo and MoTi Serving as a Barrier Layer for Cu Source/Drain Electrodes on Performances of Amorphous Silicon and IGZO TFTs
*Chuanbao Luo¹, Qianyi Zhang¹, Ziran Li¹, Xuechao Ren¹, Xiaolong Meng¹, Dai Tian¹, Bisheng Mo¹, Xiaohu Wei¹, Xialiang Yuan¹, Shijian Qin¹ (1. Shenzhen China Star Optoelectronics Technology Co., Ltd (China))

AMDp1-15 Effect of Fluorine Doping on Illumination Stability of Solution-Processed IGZO TFTs
*Kyung-Mo Jung¹, Jongsu Oh¹, Kyoung-Rae kim¹, Eun Kyo Jung¹, Jungwoo Lee¹, Yong-Sang Kim¹ (1. Sungkyunkwan University (Korea))

AMDp1-16 a-IGZO TFT Gate Integrated Driver Circuit with AC-dirven Pull-down TFTs for High stability
*Eun kyo Jung¹, Jongsu Oh¹, Jungwoo Lee¹, KeeChan Park², Jae-Hong Jeon³, Yong-Sang Kim¹ (1. Sungkyunkwan University (Korea), 2. Konkuk University (Korea), 3. Korea Aerospace University (Korea))

AMDp1-17 Effect of Ambient Atmosphere on Abnormal Degradation Behavior in Metal-Oxide Thin-Film Transistor under Positive Gate-Bias and Temperature Stress
*JIAPENG LI¹, Lei Lu², Zhihe Xia¹, Sisi Wang¹, Zhichao Zhou¹, Runxiao Shi¹, Hoi-Sing Kwok^3,1, Man Wong¹ (1. The Hong Kong University of Science and Technology (Hong Kong), 2. Peking Univeristy (China), 3. Jockey Club Institute for Advanced Study (Hong Kong))

AMDp1-18L Microwave Assisted Amorphous Oxide Thin-Film Transistors with Polymer Gate Dielectrics
*SeongCheol Jang¹, Kihyeon Bae¹, Kyung Jin Lee¹, Hyun-Suk Kim¹ (1. Chungnam National University (Korea))

AMDp1-19L Transparent AMOLED Display Derived by Metal Oxide Thin Film Transistor with Praseodymium Doping
*HUA XU¹, Miao XU², Min Li¹, Lei Wang², Junbiao Peng² (1. Guangzhou New Vision Opto-electronic Technology Co.,Ltd. (China), 2. South China University of Technology (China))

AMDp1-20L Withdrawn

AMDp1-21L Improved Mobility and Stability of Indium-Free Oxide Thin Film Transistor by Metal Capping Layer
*Ji-Min Park¹, Ho-Hyun Nahm², Hyun-Suk Kim¹ (1. Chungnam National University (Korea), 2. Korea Advanced Institute of Science and Technology (Korea))

AMDp1-22L Improved pH Reliability of Solution-Processed In₂O₃ Field-Effect Transistors via Ga Doping and Different Annealing Temperatures
JoonHui Park¹, Jeongsoo Hong², Kyung Hwan Kim², *YOU SEUNG RIM¹ (1. Sejong University (Korea), 2. Gachon University (Korea))

AMDp1-23L Contact Properties between Low-Resistive Al-Based Source/Drain and InO_xin Top-Gate Bottom-Contact Oxide Thin-Film Transistor for Application to the Vertical-TFT
*Sori Jeon¹, Kwang-Heum Lee¹, Seung-Hee Lee¹, Chi-Sun Hwang², Sang-Hee Ko Park¹ (1. Korea Advanced Institute of Science and Technology (KAIST) (Korea), 2. Electronics and Telecommunications Research Institute (ETRI) (Korea))

AMDp1-24L High Mobility p-type Tin Oxide Thin-Film by Adopting Passivation Layer
*Song-Yi Ahn¹, Hyun-Suk Kim¹ (1. Chungnam National University (Korea))

AMDp1-25L Photo-Induced Instability Behaviors of IGZO TFTs Caused by the Reversible Charge Trapping
*ChangBum Park¹, Ji Xiang Gong ¹, Martin S¹ (1. China Star Optoelectronics Semiconductor Display Technology (China))

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Poster AMDp2 : Active-Matrix Devices

Thu., Nov. 28  14:30-17:00  Main Hall

AMDp2-1 Self-Heating Effect of Low-Temperature Polycrystalline Silicon Thin Film Transistor Considering Grain Boundary Protrusion
*Abu Bakar Siddik¹, Md Hasnat Rabbi¹, Sangyeon Bae¹, Mohammad Masum Billah¹, Jin Jang¹ (1. Kyung Hee University (Korea))

AMDp2-2 14-in. 3k2k LTPS-LCD with 120Hz Driving for Notebook
*Ting Wang¹, Hongbo Zhou¹, Hao Wu¹, Junyi Li¹, Xiufeng Zhou¹ (1. XiaMen Tianma Microelectronics Co., Ltd. (China))

AMDp2-3 Comparing Single Gate TFT to Dual Gate TFT for OLED Compensation Circuit
Kook Chul Moon^1,2, *Won-Kyu Lee³, Ji Xu¹, Insun Hwang¹, Junfeng Li¹ (1. Visionox Technology Inc. (China), 2. Gachon University (Korea), 3. Kunshan Govisionox Optoelectronics (GVO) Co. Ltd. (China))

AMDp2-4 3 μm a-Si TFT Technology for High-Performance and Cost-Effective Liquid Crystal Displays
*Yani Chen^1,2, Jiaqing Zhuang², Hongyuan Xu², Zhixiong Jiang², Tian Ou², Daobin Hu², Jinjie Wang², Shengdong Zhang¹ (1. Peking University Shenzhen Graduate School (China), 2. Shenzhen China Star Optoelectronics Technology Co., Ltd (China))

AMDp2-5 Factor Analysis and Evaluation Method for Power Degradation of LTPS LCD
*guochang lai¹, huangyao wu¹, liangjie li¹, xiufeng zhou¹, junyi li¹ (1. XiaMen Tianma Microelectronics Company (China))

AMDp2-6 P-type LTPS Gate Driver to Generate Simultaneous and Overlapping Progressive Outputs for High-Resolution AMOLED Displays
*Fu-Hsing Chen¹, Chin-Hsien Tseng¹, Wei-Sheng Liao¹, Chih-Lung Lin¹ (1. National Cheng Kung University (Taiwan))

AMDp2-7 A Novel Pull-down Holding Circuit of a-si Gate Driver on Array
*Tian hong WANG¹ (1. Shenzhen China Star Optoelectronics Semiconductor Display Technology Co.,Ltd (China))

AMDp2-8 Withdrawn

AMDp2-9 A Research on Pixel Design of TDDI Infinity Display
*Zhjie Wang¹, Xiufeng Zhou¹, Guochang Lai¹, Jiaqi Kang¹, Wenfu Qiu¹, Huangyao Wu¹, Hongbo Zhou¹, Junyi Li¹ (1. Research and Development Division, XiaMen Tianma Microelectronics Co. (China))

AMDp2-10 An Analysis of Horizontal-Crosstalk in Colum Inversion Type 8Domain Large Size and Ultra High Resolution TFT-LCDs
*Xiaowen LV¹, Haiyan Quan¹, Wenfang Li¹, Yanxue Wang¹, Longqiang Shi¹, Xiaobin Hu¹, Jing Zhu¹, Tianhong Wang¹, Yifang Zhou¹, Chung-Yi Chiu¹ (1. Shenzhen China Star Optoelectronics Technology Co., Ltd (China))

AMDp2-11 Analysis of Horizontal-Mura Caused by Reset’s Abnormal Delay of GOA Output
*Xinmao Qiu¹, Yao Liu¹, Hongjiang Wu¹, Hongtao Lin¹, Baoqiang Wang¹, Wenchao Wang¹, Yaochao Lv¹, Guichun Hong¹, Min Zhou¹, Zuwen Liu¹ (1. Fuzhou BOE Optoelectronics Technology Co., Ltd (China))

AMDp2-12 Advanced TFT Modeling Techniques for GOA Driver Circuit Design Optimization
*An-thung Cho¹, James Hsu¹, Wade Chen¹, York Lu¹, Yu-ming Xia¹, Chao Wei¹, Jie Ding¹, Yong Zhang¹, Li-feng Wu² (1. Chuzhou HKC Optoelectronics Technology Co. Ltd (China), 2. Huada Empyrean Software Co., Ltd. China (China))

AMDp2-13 A Narrow Border Design and Low Power Consumption of a-Si:H TFT Gate Driver Circuit
Jhongciao Ke^1,2, Techen Chung², Chiate Liao², Chiamin Yu², Yanbing Qiao², Zhongfei Zou², *Limei Jiang², Xiaojun Guo¹ (1. Shanghai Jiao Tong University (China), 2. InfoVision Optoelectronics (Kunshan) Co., Ltd. (China))

AMDp2-14L E/E Inverter Using Four-Terminal Poly-Ge_xSn_1-xTFTs on Glass
*Ryo Miyazaki¹, Akito Hara¹ (1. Tohoku Gakuin University (Japan))

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date	time	session		room
Wed., Nov. 27	13:40-15:15	AMD1	Foldable Technology of OLED Displays	Mid-sized Hall B
	15:20-16:45	AMD2	High Resolution Display
	17:00-18:35	AMD3	Driving Technology of Micro/Mini LED Displays Special Topics of Interest on Micro/Mini LEDs
Thu., Nov. 28	9:00-10:20	AMD4	Emerging TFTs
	10:40-13:10	AMDp1	Oxide TFTs	Main Hall
	14:30-17:00	AMDp2	Active-Matrix Devices	Main Hall
Fri., Nov. 29	9:00-10:30	AMD5	Oxide TFT: Device Fundamentals	Mid-sized Hall B
	10:40-12:15	AMD6	Oxide TFT: Device Application
	13:20-14:40	AMD7	Oxide TFT: Fabrication Process
	15:00-16:25	AMD8	Advanced Driving Technology for High-quality Display

AMD1-1	Invited Development of Foldable AMOLED Displays Based on Neutral-Plane Splitting Concept *Masumi Nishimura¹, Kisako Takebayashi¹, Masatomo Hishinuma¹, Hajime Yamaguchi¹, Akio Murayama¹ (1. Japan Display Inc. (Japan))
AMD1-2	Invited Ubiquitous Display, The Golden Age of OLED *Chenggong Wang¹, Zhibo Yao¹, Yifan Liu¹, Xianrui Qian¹, Jiye Xia¹ (1. Visionox Technology Inc (China))
AMD1-3	Withdrawn
AMD1-4	Positive Bias-Stress Stability of Flexible Amorphous InGaZnO Thin Film Transistors with Double-Stacked Gate Insulators *Chengyuan Dong¹, Guochao Liu¹, Ying Zhang¹, Guofeng Feng¹, Wen Zhang¹ (1. Shanghai Jiao Tong University (China))
AMD1-5L	Stretchable Oxide TFTs on PI/SEBS Substrate *Chanju Park¹, Suhui Lee¹, Jin Jang¹ (1. Kyung Hee University (Korea))

AMD2-1	Invited Development of 88-inch 120Hz 8K OLED TV for Mass Production *Koichi Miwa¹, Hyun-Haeng Lee¹, Seong-Eok Han¹, Yong-Joon Heo¹, Du-Hwan Oh¹, Shin-Kyun Park¹ (1. LG Display Co., Ltd. (Korea))
AMD2-2	Invited 5291 ppi OLED Display with C-Axis Aligned Crystalline Oxide Semiconductor *Shuichi Katsui¹, Hidetomo Kobayashi¹, Takashi Nakagawa¹, Yuki Tamatsukuri¹, Hideaki Shishido¹, Shogo Uesaka¹, Ryohei Yamaoka¹, Takaaki Nagata¹, Tomoya Aoyama¹, Yutaka Okazaki¹, Takayuki Ikeda¹, Shunpei Yamazaki¹ (1. Semiconductor Energy Laboratory Co., Ltd. (Japan))
AMD2-3	Novel Compensation Pixel Circuit with Simultaneous Emission Driving Scheme for High-Resolution AMOLED Displays *Jui-Hung Chang¹, Chin-Hsien Tseng¹, Sung-Chun Chen¹, Chih-Lung Lin¹ (1. National Cheng Kung University (Taiwan))
AMD2-4L	75-inch LCD Displays with AM MiniLED Local Dimming Backlight Units on Glass Juncheng Xiao¹, *Jiayang Fei¹, Hongyuan Xu¹, Yongyuan Qiu¹, Quansheng Liu¹, Yong Yang¹, Junling Liu¹, Jiaqing Zhuang¹, Chunming Liu¹, Daobing Hu¹, Xin Zhang¹ (1. Shenzhen China Star Optoelectronics Technology Co., Ltd (China))

AMD3-1	Invited Crystal LED Display System for Immersive Viewing Experience *Katsuhiro Tomoda¹, Norifumi Kikuchi¹, Goshi Biwa^2,1, Hisashi Kadota^1,2 (1. Sony Semiconductor Solutions Corporation (Japan), 2. Sony Corporation (Japan))
AMD3-2	Invited Active Matrix Driving Mini-LED Device *Chin-Lung Ting¹, Chung-Kuang Wei¹, Li-Wei Mau¹, Ker-Yih Kao¹, Ho-Tien Chen¹, Minoru Shibazaki² (1. Innolux Corporation (Taiwan), 2. Innolux Japan (Japan))
AMD3-3	Invited A 200-ppi Full Color Active Matrix Micro-LED Display with Low-Temperature-Poly-Silicon TFT Backplane *Masaya Tamaki¹, Sho Nakamitsu¹, Hiroaki Ito¹, Takanobu Suzuki¹, Masahiko Nishide¹, Kunio Imaizumi¹, Katsumi Yamanoguchi¹, Fanny Rahadian¹, Katsumi Aoki¹, Seiji Matsuda¹, Ryoichi Yokoyama¹ (1. Kyocera Corporation (Japan))
AMD3-4	Active Matrix Monolithic Full-Color LED Micro Display *Longheng Qi¹, Xu Zhang¹, Wing Cheung Chong¹, Peian Li¹, Chak Wah Tang¹, Kei May Lau¹ (1. The Hong Kong University of Science and Technology (Hong Kong))

AMD4-1	Invited Active-Matrix Driven Flexible Mini-LED Displays Based on High-Performance Organic Single-Crystal TFTs *Jun Takeya^1,2 (1. The University of Tokyo (Japan), 2. Organo-Circuit Inc. (Japan))
AMD4-2	Invited Printing of 3D Electronic Circuits and Organic Thin-Film Transistors *Takeo Minari¹, Qingqing Sun¹, Wanli Li¹, Xuying Liu², Masayuki Kanehara³ (1. National Institute for Materials Science (NIMS) (Japan), 2. Zhengzhou University (China), 3. C-INK Co., Ltd. (Japan))
AMD4-3	Withdrawn
AMD4-4L	Integrated Polycrystalline Silicon Photomask Technology for Low-Temperature Polycrystalline Silicon (LTPS) TFTs *Jia-Hong Ye¹, Ching-Liang Huang¹, Kuo-Yu Huang¹, Maw-Song Chen¹, Wen-Ching Tsai¹, Wei-Ming Huang¹, Yang-An Wu¹ (1. AUO (Taiwan))
AMD4-5L	Improving Performances of Oxide Phototransistors Using a Mechano-Chemically Treated Porous Structure as The Visible Light Absorption Layer *I Sak Lee¹, Bennet Nii Akwei Brown², Dongwoo Kim¹, Sujin Jung¹, Byung Ha Kang¹, Hyun Jae Kim¹ (1. Yonsei University (Korea), 2. Columbia University (United States of America))

AMD5-1	Invited Switching Characteristic Enhancement of P-type Cu₂O TFTs Dongwoo Kim¹, I Sak Lee¹, Sujin Jung¹, Sung Min Rho¹, *Hyun Jae Kim¹ (1. Yonsei University (Korea))
AMD5-2	Invited High Mobility Metal-Oxide Devices for Display SoP and 3D Brain-Mimicking IC *Albert Chin¹, Te Jui Yen¹, Cheng Wei Shih¹, You-Da Chen¹ (1. National Chiao Tung University (Taiwan))
AMD5-3	High Mobility Oxide TFT Based on In-rich In-Ga-Sn-O Semiconductors with Nanocrystalline Structures *XUERU MEI², HUAFEI XIE¹, NIAN LIU², MACAI LU², Lei Wen², Shujhih Chen², Shengdong Zhang², Chiayu Lee², Xin Zhang² (1. Peking University (China), 2. Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd (China))
AMD5-4	Simulation Study of Self-Heating and Edge Effects on Oxide-Semiconductor TFTs: Channel-Width Dependence *Katsumi Abe¹, Kazuki Ota¹, Takeshi Kuwagaki¹ (1. Silvaco Japan Co., Ltd. (Japan))

AMD6-1	Invited High Performance Short Channel Oxide TFTs for Transparent Top Emission OLED TVs *Chanki Ha¹, Eunah Heo¹, Wonbeom Yoo¹, Heungjo Lee¹, Keun-Yong Ban¹, Jonguk Bae¹, Jongwoo Kim¹ (1. LG Display (Korea))
AMD6-2	Invited Development of High Mobility Top Gate IGZO-TFT for Automotive OLED Display *Yujiro Takeda¹, Aman Mehadi¹, Shogo Murashige¹, Kazuatsu Ito¹, Izumi Ishida¹, Shinji Nakajima¹, Hiroshi Matsukizono¹, Naoki Makita¹ (1. SHARP Corporation (Japan))
AMD6-3	Invited Top-Gate Oxide TFTs with Ion-Implanted Source/Drain Regions in Advanced LTPS Technology *Isao Suzumura¹, Toshihide Jinnai¹, Hajime Watakabe¹, Akihiro Hanada¹, Ryo Onodera¹, Tomoyuki Ito¹ (1. Japan Display Inc. (Japan))
AMD6-4	Fabrication of Top-Gate Self-Aligned Amorphous InGaSnO TFTs with High Mobility *Nian Liu¹, Huafei Xie², Xueru Mei¹, Macai Lu¹, Lei Wen¹, Shujhih Chen¹, Shengdong Zhang², Chiayu Lee¹, Xin Zhang¹ (1. Shenzhen China Star Optoelectronics Semiconductor Display Technology Co.Ltd., China (China), 2. School of Electronic and Computer Engineering, Peking University, Shenzhen, China (China))

AMD7-1	Invited Nanostructured IGZO Thin-Film Transistors with Remarkably Enhanced Current Density and On-Off Ratio Kairong Huang¹, *Chuan Liu¹ (1. Sun Yat-sen University (China))
AMD7-2	Effect of Lanthanum Doping on the Electrical Performance of Spray Coated ZnO Thin Film Transistor *RAVINDRA NAIK BUKKE¹, NARENDRA NAIK MUDE, JEWEL KUMER SAHA, YOUNGOO KIM, JIN JANG (1. KYUNG HEE UNIVERSITY (Korea))
AMD7-3	Highly Stable High Mobility Top-gate Structured Oxide TFT by Supplying Optimized Oxygen and Hydrogen to Semiconductors *Jong Beom Ko¹, Seung-Hee Lee¹, Sang-Hee Ko Park¹ (1. Korea Advanced Institute of Science and Technology (Korea))
AMD7-4L	Low-Temperature IGZO Technology on Transparent Plastic Foil by Atmospheric Spatial Atomic Layer Deposition Corné Frijters^1,2, Roy Verbeek¹, Gerard de Haas¹, Tung Huei Ke³, Erwin Vandenplas³, Marc Ameys³, Jan-Laurens van der Steen¹, Gerwin Gelinck^1,4, Eric Meulenkamp¹, Paul Poodt^1,2, Auke Kronemeijer¹, *Ilias Katsouras¹ (1. TNO/Centre (Netherlands), 2. SALDtech B.V. (Netherlands), 3. imec (Belgium), 4. Eindhoven University of Technology (Netherlands))

AMD8-1	Invited High Performance Oxide TFT Technology for Med.-Large Size OLED Displays *Toshiaki Arai¹ (1. JOLED Inc. (Japan))
AMD8-2	A 6T1C Dynamic Threshold Voltage Compensation IGZO-GOA Circuit for 31-inch AMOLED Display with Slim Border *Yan Xue^1,2, Baixiang Han¹, Xian Wang¹, Shuai Zhou¹, Gary Chaw¹, Chun-Hsiung Fang¹, Yuan-Chun Wu¹ (1. CSOT (China), 2. Peiking university (China))
AMD8-3	New 3.5T2C Pixel Circuit with Symmetrical Structure for 3D AMOLED Displays *Chieh-An Lin¹, Li-Jung Chen¹, Chia-Ling Tsai¹, Chih-Lung Lin¹ (1. National Cheng Kung University (Taiwan))
AMD8-4	A Novel OLED Pixel Circuit with Controllable Threshold Voltage Compensation Time *Jung Chul Kim¹, Seonghwan Hong¹, Sujin Jung¹, Mihee Sin², Jun Suk Yoo², Han Wook Hwang², Yong Min Ha², Hyun Jae Kim¹ (1. Yonsei University (Korea), 2. LG Display, Ltd. (Korea))

AMDp1-1	Improvement in Carrier Mmobility of ZnON Transistor by Tantalum Encapsulation *Minjae Kim¹, Jae Kyeong Jeong¹ (1. Hanyang Univ. (Korea))
AMDp1-2	Withdrawn
AMDp1-3	Withdrawn
AMDp1-4	Stable and High-Mobility Oxide TFTs Using Low-Temperature Processed ZTO/IZO Stacked Channels *Tsubasa Moritsuka¹, Hiroyuki Uchiyama¹ (1. Hitachi, Ltd. (Japan))
AMDp1-5	Transfer Characteristics of H_₂O_₂-Doped ZrInZnO Thin Film Transistors *Sangmin Lee¹, Bohyeon Jeon¹, Byoungdeog Choi¹ (1. Sungkyunkwan University (Korea))
AMDp1-6	Study on the Influence Factors of ESD Defect for a-IGZO TFT *Ding Yuan Li¹, Ru Wang Guo¹, Tian Zhen Liu¹, Xian Xue Duan¹, Sang Jin Kim¹, Sang Soo Park¹, Ming Ming Chu¹, Xin Hong Chen¹, Li Li Wei¹, Hai Feng Chen¹, Wei Fang¹ (1. BOE HF (China))
AMDp1-7	Study on Promoting Transmittance on Dielectric Multi-layers for IGZO LCD Displays *Ningbo Yi^1,2, Lixia Li², Sibang Long², Sen Yan², Feng Zhao² (1. Peking University Shenzhen Graduate School (China), 2. Shenzhen China Star Optoelectronics Technology Co., LTD (China))
AMDp1-8	Characteristics of Top-Gate Self-Aligned Oxide A-IGZO TFT with Copper Light Shield LayerCharacteristics of Top-Gate Self-Aligned Oxide A-IGZO TFT with Copper Light Shield Layer *Qian Ma^1,2, Xingyu Zhou², YuanJun Hsu², Yuanchun Wu² (1. Peking University Shenzhen Graduate School (China), 2. Shenzhen China Star Optoelectronics Technology Co., LTD (China))
AMDp1-9	Fluorine-Doped Indium Gallium Zinc Oxide Thin-Film Transistors Fabricated via Solution Process *Donghee Choi¹, Byoungdeog Choi¹ (1. University of Sungkyunkwan (Korea))
AMDp1-10	Analysis and Solution of 4/5/6 levels related Issues in a-IGZO TFT Gate Driving Circuits for 32-in FHD TFT-LCD *suping xi¹, tianhong Wang¹, longqiang Shi¹, yifang chou¹, shiming Ge¹, chuhong Dai¹, jiajia Yu¹, Liang Hu¹, Jiang Zhu¹, wei Shao¹ (1. China Star Optoelectronics Technology (China))
AMDp1-11	Investigation of Hump Phenomenon in a-IGZO Thin-Film Transistors under Positive Bias Stress *Xinlv Duan¹ (1. Institute of Microelectronics of the Chinses Academy of Sciences (China))
AMDp1-12	Withdrawn
AMDp1-13	High-Mobility and High-Reliability Top-Gate Self-Aligned IGZO TFTs with Incorporate High Density Passivation Layer (HDP) after PV deposition *Peng Zhang^1,2, Guo Zhen Lin^1,2, Ning Shu Zhao^1,2, Tao Le Zhang^1,2,3, Jun Yuan Hsu^1,2, Bo Jiang Yao^2,1 (1. Shenzhen China Star Optoelectronics Technology Co., Ltd. (China), 2. National Engineering Laboratory for AMOLED Process Technology (China), 3. School of Electronic and Computer Engineering, Shenzhen Graduate School, Peking University (China))
AMDp1-14	Effect of Mo and MoTi Serving as a Barrier Layer for Cu Source/Drain Electrodes on Performances of Amorphous Silicon and IGZO TFTs *Chuanbao Luo¹, Qianyi Zhang¹, Ziran Li¹, Xuechao Ren¹, Xiaolong Meng¹, Dai Tian¹, Bisheng Mo¹, Xiaohu Wei¹, Xialiang Yuan¹, Shijian Qin¹ (1. Shenzhen China Star Optoelectronics Technology Co., Ltd (China))
AMDp1-15	Effect of Fluorine Doping on Illumination Stability of Solution-Processed IGZO TFTs *Kyung-Mo Jung¹, Jongsu Oh¹, Kyoung-Rae kim¹, Eun Kyo Jung¹, Jungwoo Lee¹, Yong-Sang Kim¹ (1. Sungkyunkwan University (Korea))
AMDp1-16	a-IGZO TFT Gate Integrated Driver Circuit with AC-dirven Pull-down TFTs for High stability *Eun kyo Jung¹, Jongsu Oh¹, Jungwoo Lee¹, KeeChan Park², Jae-Hong Jeon³, Yong-Sang Kim¹ (1. Sungkyunkwan University (Korea), 2. Konkuk University (Korea), 3. Korea Aerospace University (Korea))
AMDp1-17	Effect of Ambient Atmosphere on Abnormal Degradation Behavior in Metal-Oxide Thin-Film Transistor under Positive Gate-Bias and Temperature Stress *JIAPENG LI¹, Lei Lu², Zhihe Xia¹, Sisi Wang¹, Zhichao Zhou¹, Runxiao Shi¹, Hoi-Sing Kwok^3,1, Man Wong¹ (1. The Hong Kong University of Science and Technology (Hong Kong), 2. Peking Univeristy (China), 3. Jockey Club Institute for Advanced Study (Hong Kong))
AMDp1-18L	Microwave Assisted Amorphous Oxide Thin-Film Transistors with Polymer Gate Dielectrics *SeongCheol Jang¹, Kihyeon Bae¹, Kyung Jin Lee¹, Hyun-Suk Kim¹ (1. Chungnam National University (Korea))
AMDp1-19L	Transparent AMOLED Display Derived by Metal Oxide Thin Film Transistor with Praseodymium Doping *HUA XU¹, Miao XU², Min Li¹, Lei Wang², Junbiao Peng² (1. Guangzhou New Vision Opto-electronic Technology Co.,Ltd. (China), 2. South China University of Technology (China))
AMDp1-20L	Withdrawn
AMDp1-21L	Improved Mobility and Stability of Indium-Free Oxide Thin Film Transistor by Metal Capping Layer *Ji-Min Park¹, Ho-Hyun Nahm², Hyun-Suk Kim¹ (1. Chungnam National University (Korea), 2. Korea Advanced Institute of Science and Technology (Korea))
AMDp1-22L	Improved pH Reliability of Solution-Processed In₂O₃ Field-Effect Transistors via Ga Doping and Different Annealing Temperatures JoonHui Park¹, Jeongsoo Hong², Kyung Hwan Kim², *YOU SEUNG RIM¹ (1. Sejong University (Korea), 2. Gachon University (Korea))
AMDp1-23L	Contact Properties between Low-Resistive Al-Based Source/Drain and InO_xin Top-Gate Bottom-Contact Oxide Thin-Film Transistor for Application to the Vertical-TFT *Sori Jeon¹, Kwang-Heum Lee¹, Seung-Hee Lee¹, Chi-Sun Hwang², Sang-Hee Ko Park¹ (1. Korea Advanced Institute of Science and Technology (KAIST) (Korea), 2. Electronics and Telecommunications Research Institute (ETRI) (Korea))
AMDp1-24L	High Mobility p-type Tin Oxide Thin-Film by Adopting Passivation Layer *Song-Yi Ahn¹, Hyun-Suk Kim¹ (1. Chungnam National University (Korea))
AMDp1-25L	Photo-Induced Instability Behaviors of IGZO TFTs Caused by the Reversible Charge Trapping *ChangBum Park¹, Ji Xiang Gong ¹, Martin S¹ (1. China Star Optoelectronics Semiconductor Display Technology (China))

AMDp2-1	Self-Heating Effect of Low-Temperature Polycrystalline Silicon Thin Film Transistor Considering Grain Boundary Protrusion *Abu Bakar Siddik¹, Md Hasnat Rabbi¹, Sangyeon Bae¹, Mohammad Masum Billah¹, Jin Jang¹ (1. Kyung Hee University (Korea))
AMDp2-2	14-in. 3k2k LTPS-LCD with 120Hz Driving for Notebook *Ting Wang¹, Hongbo Zhou¹, Hao Wu¹, Junyi Li¹, Xiufeng Zhou¹ (1. XiaMen Tianma Microelectronics Co., Ltd. (China))
AMDp2-3	Comparing Single Gate TFT to Dual Gate TFT for OLED Compensation Circuit Kook Chul Moon^1,2, *Won-Kyu Lee³, Ji Xu¹, Insun Hwang¹, Junfeng Li¹ (1. Visionox Technology Inc. (China), 2. Gachon University (Korea), 3. Kunshan Govisionox Optoelectronics (GVO) Co. Ltd. (China))
AMDp2-4	3 μm a-Si TFT Technology for High-Performance and Cost-Effective Liquid Crystal Displays *Yani Chen^1,2, Jiaqing Zhuang², Hongyuan Xu², Zhixiong Jiang², Tian Ou², Daobin Hu², Jinjie Wang², Shengdong Zhang¹ (1. Peking University Shenzhen Graduate School (China), 2. Shenzhen China Star Optoelectronics Technology Co., Ltd (China))
AMDp2-5	Factor Analysis and Evaluation Method for Power Degradation of LTPS LCD *guochang lai¹, huangyao wu¹, liangjie li¹, xiufeng zhou¹, junyi li¹ (1. XiaMen Tianma Microelectronics Company (China))
AMDp2-6	P-type LTPS Gate Driver to Generate Simultaneous and Overlapping Progressive Outputs for High-Resolution AMOLED Displays *Fu-Hsing Chen¹, Chin-Hsien Tseng¹, Wei-Sheng Liao¹, Chih-Lung Lin¹ (1. National Cheng Kung University (Taiwan))
AMDp2-7	A Novel Pull-down Holding Circuit of a-si Gate Driver on Array *Tian hong WANG¹ (1. Shenzhen China Star Optoelectronics Semiconductor Display Technology Co.,Ltd (China))
AMDp2-8	Withdrawn
AMDp2-9	A Research on Pixel Design of TDDI Infinity Display *Zhjie Wang¹, Xiufeng Zhou¹, Guochang Lai¹, Jiaqi Kang¹, Wenfu Qiu¹, Huangyao Wu¹, Hongbo Zhou¹, Junyi Li¹ (1. Research and Development Division, XiaMen Tianma Microelectronics Co. (China))
AMDp2-10	An Analysis of Horizontal-Crosstalk in Colum Inversion Type 8Domain Large Size and Ultra High Resolution TFT-LCDs *Xiaowen LV¹, Haiyan Quan¹, Wenfang Li¹, Yanxue Wang¹, Longqiang Shi¹, Xiaobin Hu¹, Jing Zhu¹, Tianhong Wang¹, Yifang Zhou¹, Chung-Yi Chiu¹ (1. Shenzhen China Star Optoelectronics Technology Co., Ltd (China))
AMDp2-11	Analysis of Horizontal-Mura Caused by Reset’s Abnormal Delay of GOA Output *Xinmao Qiu¹, Yao Liu¹, Hongjiang Wu¹, Hongtao Lin¹, Baoqiang Wang¹, Wenchao Wang¹, Yaochao Lv¹, Guichun Hong¹, Min Zhou¹, Zuwen Liu¹ (1. Fuzhou BOE Optoelectronics Technology Co., Ltd (China))
AMDp2-12	Advanced TFT Modeling Techniques for GOA Driver Circuit Design Optimization *An-thung Cho¹, James Hsu¹, Wade Chen¹, York Lu¹, Yu-ming Xia¹, Chao Wei¹, Jie Ding¹, Yong Zhang¹, Li-feng Wu² (1. Chuzhou HKC Optoelectronics Technology Co. Ltd (China), 2. Huada Empyrean Software Co., Ltd. China (China))
AMDp2-13	A Narrow Border Design and Low Power Consumption of a-Si:H TFT Gate Driver Circuit Jhongciao Ke^1,2, Techen Chung², Chiate Liao², Chiamin Yu², Yanbing Qiao², Zhongfei Zou², *Limei Jiang², Xiaojun Guo¹ (1. Shanghai Jiao Tong University (China), 2. InfoVision Optoelectronics (Kunshan) Co., Ltd. (China))
AMDp2-14L	E/E Inverter Using Four-Terminal Poly-Ge_xSn_1-xTFTs on Glass *Ryo Miyazaki¹, Akito Hara¹ (1. Tohoku Gakuin University (Japan))