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Workshop on Active Matrix Displays
date time session room Wed., Nov. 27 13:40-15:15 AMD1 Foldable Technology of OLED Displays Mid-sized Hall B 15:20-16:45 AMD2 High Resolution Display 17:00-18:35 AMD3 Driving Technology of Micro/Mini LED Displays
Special Topics of Interest on Micro/Mini LEDsThu., Nov. 28 9:00-10:20 AMD4 Emerging TFTs 10:40-13:10 AMDp1 Oxide TFTs Main Hall 14:30-17:00 AMDp2 Active-Matrix Devices Fri., Nov. 29 9:00-10:30 AMD5 Oxide TFT: Device Fundamentals Mid-sized Hall B 10:40-12:15 AMD6 Oxide TFT: Device Application 13:20-14:40 AMD7 Oxide TFT: Fabrication Process 15:00-16:25 AMD8 Advanced Driving Technology for High-quality Display AMD1 : Foldable Technology of OLED Displays
Wed., Nov. 27 13:40-15:15 Mid-sized Hall B
Chair: Koichi Miwa (LG Display Co.,Ltd)
Co-Chair: Keisuke Omoto (Apple)
AMD2 : High Resolution Display
Wed., Nov. 27 15:20-16:45 Mid-sized Hall B
Chair: Junichi Takeya (University of Tokyo)
Co-Chair: Hiroki Hamada (Kindai Univ.)
AMD2-1 Invited Development of 88-inch 120Hz 8K OLED TV for Mass Production
*Koichi Miwa1, Hyun-Haeng Lee1, Seong-Eok Han1, Yong-Joon Heo1, Du-Hwan Oh1, Shin-Kyun Park1 (1. LG Display Co., Ltd. (Korea))AMD2-2 Invited 5291 ppi OLED Display with C-Axis Aligned Crystalline Oxide Semiconductor
*Shuichi Katsui1, Hidetomo Kobayashi1, Takashi Nakagawa1, Yuki Tamatsukuri1, Hideaki Shishido1, Shogo Uesaka1, Ryohei Yamaoka1, Takaaki Nagata1, Tomoya Aoyama1, Yutaka Okazaki1, Takayuki Ikeda1, Shunpei Yamazaki1 (1. Semiconductor Energy Laboratory Co., Ltd. (Japan))AMD2-3 Novel Compensation Pixel Circuit with Simultaneous Emission Driving Scheme for High-Resolution AMOLED Displays
*Jui-Hung Chang1, Chin-Hsien Tseng1, Sung-Chun Chen1, Chih-Lung Lin1 (1. National Cheng Kung University (Taiwan))AMD2-4L 75-inch LCD Displays with AM MiniLED Local Dimming Backlight Units on Glass
Juncheng Xiao1, *Jiayang Fei1, Hongyuan Xu1, Yongyuan Qiu1, Quansheng Liu1, Yong Yang1, Junling Liu1, Jiaqing Zhuang1, Chunming Liu1, Daobing Hu1, Xin Zhang1 (1. Shenzhen China Star Optoelectronics Technology Co., Ltd (China))
AMD3 : Driving Technology of Micro/Mini LED Displays
Special Topics of Interest on Micro/Mini LEDsWed., Nov. 27 17:00-18:35 Mid-sized Hall B
Chair: Kazumasa Nomoto (Sony)
Co-Chair: Keisuke Omoto (Apple)
AMD3-1 Invited Crystal LED Display System for Immersive Viewing Experience
*Katsuhiro Tomoda1, Norifumi Kikuchi1, Goshi Biwa2,1, Hisashi Kadota1,2 (1. Sony Semiconductor Solutions Corporation (Japan), 2. Sony Corporation (Japan))AMD3-2 Invited Active Matrix Driving Mini-LED Device
*Chin-Lung Ting1, Chung-Kuang Wei1, Li-Wei Mau1, Ker-Yih Kao1, Ho-Tien Chen1, Minoru Shibazaki2 (1. Innolux Corporation (Taiwan), 2. Innolux Japan (Japan))AMD3-3 Invited A 200-ppi Full Color Active Matrix Micro-LED Display with Low-Temperature-Poly-Silicon TFT Backplane
*Masaya Tamaki1, Sho Nakamitsu1, Hiroaki Ito1, Takanobu Suzuki1, Masahiko Nishide1, Kunio Imaizumi1, Katsumi Yamanoguchi1, Fanny Rahadian1, Katsumi Aoki1, Seiji Matsuda1, Ryoichi Yokoyama1 (1. Kyocera Corporation (Japan))AMD3-4 Active Matrix Monolithic Full-Color LED Micro Display
*Longheng Qi1, Xu Zhang1, Wing Cheung Chong1, Peian Li1, Chak Wah Tang1, Kei May Lau1 (1. The Hong Kong University of Science and Technology (Hong Kong))
Thu., Nov. 28 9:00-10:20 Mid-sized Hall B
Chair: Hyun Jae Kim (Yonsei Univ.)
Co-Chair: Yosei Shibata (Tohoku Univ.)
AMD5 : Oxide TFT: Device Fundamentals
Fri., Nov. 29 9:00-10:30 Mid-sized Hall B
Chair: Kazumasa Nomoto (Sony)
Co-Chair: Hideya Kumomi (Tokyo Tech)
AMD5-1 Invited Switching Characteristic Enhancement of P-type Cu2O TFTs
Dongwoo Kim1, I Sak Lee1, Sujin Jung1, Sung Min Rho1, *Hyun Jae Kim1 (1. Yonsei University (Korea))AMD5-2 Invited High Mobility Metal-Oxide Devices for Display SoP and 3D Brain-Mimicking IC
*Albert Chin1, Te Jui Yen1, Cheng Wei Shih1, You-Da Chen1 (1. National Chiao Tung University (Taiwan))AMD5-3 High Mobility Oxide TFT Based on In-rich In-Ga-Sn-O Semiconductors with Nanocrystalline Structures
*XUERU MEI2, HUAFEI XIE1, NIAN LIU2, MACAI LU2, Lei Wen2, Shujhih Chen2, Shengdong Zhang2, Chiayu Lee2, Xin Zhang2 (1. Peking University (China), 2. Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd (China))AMD5-4 Simulation Study of Self-Heating and Edge Effects on Oxide-Semiconductor TFTs: Channel-Width Dependence
*Katsumi Abe1, Kazuki Ota1, Takeshi Kuwagaki1 (1. Silvaco Japan Co., Ltd. (Japan))
AMD6 : Oxide TFT: Device Application
Fri., Nov. 29 10:40-12:15 Mid-sized Hall B
Chair: Chuan Liu (Sun Yat-sen University)
Co-Chair: Susumu Horita (JAIST)
AMD6-1 Invited High Performance Short Channel Oxide TFTs for Transparent Top Emission OLED TVs
*Chanki Ha1, Eunah Heo1, Wonbeom Yoo1, Heungjo Lee1, Keun-Yong Ban1, Jonguk Bae1, Jongwoo Kim1 (1. LG Display (Korea))AMD6-2 Invited Development of High Mobility Top Gate IGZO-TFT for Automotive OLED Display
*Yujiro Takeda1, Aman Mehadi1, Shogo Murashige1, Kazuatsu Ito1, Izumi Ishida1, Shinji Nakajima1, Hiroshi Matsukizono1, Naoki Makita1 (1. SHARP Corporation (Japan))AMD6-3 Invited Top-Gate Oxide TFTs with Ion-Implanted Source/Drain Regions in Advanced LTPS Technology
*Isao Suzumura1, Toshihide Jinnai1, Hajime Watakabe1, Akihiro Hanada1, Ryo Onodera1, Tomoyuki Ito1 (1. Japan Display Inc. (Japan))AMD6-4 Fabrication of Top-Gate Self-Aligned Amorphous InGaSnO TFTs with High Mobility
*Nian Liu1, Huafei Xie2, Xueru Mei1, Macai Lu1, Lei Wen1, Shujhih Chen1, Shengdong Zhang2, Chiayu Lee1, Xin Zhang1 (1. Shenzhen China Star Optoelectronics Semiconductor Display Technology Co.Ltd., China (China), 2. School of Electronic and Computer Engineering, Peking University, Shenzhen, China (China))
AMD7 : Oxide TFT: Fabrication Process
Fri., Nov. 29 13:20-14:40 Mid-sized Hall B
Chair: Toshiaki Arai (JOLED Inc.)
Co-Chair: Yujiro Takeda (Sharp)
AMD7-1 Invited Nanostructured IGZO Thin-Film Transistors with Remarkably Enhanced Current Density and On-Off Ratio
Kairong Huang1, *Chuan Liu1 (1. Sun Yat-sen University (China))AMD7-2 Effect of Lanthanum Doping on the Electrical Performance of Spray Coated ZnO Thin Film Transistor
*RAVINDRA NAIK BUKKE1, NARENDRA NAIK MUDE, JEWEL KUMER SAHA, YOUNGOO KIM, JIN JANG (1. KYUNG HEE UNIVERSITY (Korea))AMD7-3 Highly Stable High Mobility Top-gate Structured Oxide TFT by Supplying Optimized Oxygen and Hydrogen to Semiconductors
*Jong Beom Ko1, Seung-Hee Lee1, Sang-Hee Ko Park1 (1. Korea Advanced Institute of Science and Technology (Korea))AMD7-4L Low-Temperature IGZO Technology on Transparent Plastic Foil by Atmospheric Spatial Atomic Layer Deposition
Corné Frijters1,2, Roy Verbeek1, Gerard de Haas1, Tung Huei Ke3, Erwin Vandenplas3, Marc Ameys3, Jan-Laurens van der Steen1, Gerwin Gelinck1,4, Eric Meulenkamp1, Paul Poodt1,2, Auke Kronemeijer1, *Ilias Katsouras1 (1. TNO/Centre (Netherlands), 2. SALDtech B.V. (Netherlands), 3. imec (Belgium), 4. Eindhoven University of Technology (Netherlands))
AMD8 : Advanced Driving Technology for High-quality Display
Fri., Nov. 29 15:00-16:25 Mid-sized Hall B
Chair: Masahide Inoue (Huawei Techs. Japan)
Co-Chair: Isao Suzumura (Japan Display Inc.)
AMD8-1 Invited High Performance Oxide TFT Technology for Med.-Large Size OLED Displays
*Toshiaki Arai1 (1. JOLED Inc. (Japan))AMD8-2 A 6T1C Dynamic Threshold Voltage Compensation IGZO-GOA Circuit for 31-inch AMOLED Display with Slim Border
*Yan Xue1,2, Baixiang Han1, Xian Wang1, Shuai Zhou1, Gary Chaw1, Chun-Hsiung Fang1, Yuan-Chun Wu1 (1. CSOT (China), 2. Peiking university (China))AMD8-3 New 3.5T2C Pixel Circuit with Symmetrical Structure for 3D AMOLED Displays
*Chieh-An Lin1, Li-Jung Chen1, Chia-Ling Tsai1, Chih-Lung Lin1 (1. National Cheng Kung University (Taiwan))AMD8-4 A Novel OLED Pixel Circuit with Controllable Threshold Voltage Compensation Time
*Jung Chul Kim1, Seonghwan Hong1, Sujin Jung1, Mihee Sin2, Jun Suk Yoo2, Han Wook Hwang2, Yong Min Ha2, Hyun Jae Kim1 (1. Yonsei University (Korea), 2. LG Display, Ltd. (Korea))
Thu., Nov. 28 10:40-13:10 Main Hall
Poster AMDp2 : Active-Matrix Devices
Thu., Nov. 28 14:30-17:00 Main Hall