Special Topics of Interest on Oxide-Semiconductor TFT


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Special Topics of Interest on Oxide-Semiconductor TFT

date time session room

Thu., Dec. 13 10:40-13:10 AMDp1 Oxide TFTs Event Hall

14:20-16:50 FMCp7 Manufacturing and Materials of Oxide TFTs

Fri., Dec. 14 10:40-11:50 AMD6 Oxide TFT: Device Reception Hall 1

13:10-14:35 AMD7 Oxide TFT: Stability and Fundamental (1)

14:50-16:10 AMD8 Oxide TFT: Stability and Fundamental (2)

AMD6 : Oxide TFT: Device

Fri., Dec. 14  10:40-11:50  Reception Hall 1

Chair: J. Kim (Tokyo Tech, Japan)
Co-Chair: K. Takatori (Huawei Techs. Japan, Japan)

AMD6-1 Invited Spreading Currents in Oxide TFTs
S. Lee, T.-W. Kim*, J. Jang (Kyung Hee Univ., Korea)

AMD6-2 Invited Top-Gate Oxide TFT Technologies  for Advanced LCDs
I. Suzumura, Y. Yamaguchi, H. Kawanago (Japan Display, Japan)

AMD6-3 Oxide Semiconductor Based Vertical TFT for Ultra High-resolution Backplane Technology
K.-H. Lee, S. Lee, H.-I. Yeom, J.-B. Ko, C.-S. Hwang*, S.-H. K. Park (KAIST, Korea, *ETRI, Korea)

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AMD7 : Oxide TFT: Stability and Fundamental (1)

Fri., Dec. 14  13:10-14:35  Reception Hall 1

Chair: I. Suzumura (Japan Display, Japan)
Co-Chair: H. Kumomi (Tokyo Tech, Japan)

AMD7-1 Invited Electronic Structure and Defects  in Amorphous Oxide Semiconductor:A Comprehensive Review
T. Kamiya, H. Kumomi, H. Hosono (Tokyo Tech, Japan)

AMD7-2 Enhancing Reliability of Amorphous In-Ga-Zn-O Thin Film Transistors by Nitrogen Doping
T. Sung, K. Park, J. H. Kim*, H.-W. Park**, P. Yun***, J. Noh***, S. W. Lee***, K.-S. Park***, S. Y. Yoon***, I. B. Kang***, K.-B. Chung**, H.-S. Kim*, J.-Y. Kwon (Yonsei Univ., Korea, *Chungnam Nat. Univ., Korea, **Dongguk Univ., Korea, ***LG Display, Korea)

AMD7-3 Simulation Study of Self-Heating Effects on Amorphous Oxide Semiconductor TFTs: Channel-Length Dependence
K. Abe, M. Fujinaga, T. Kuwagaki (Silvaco Japan, Japan)

AMD7-4 A 31-in. 4K2K AMOLED Display Using High Mobility and Reliability Top-Gate Self-Aligned IGZO TFTs with Cu Electrode
Z.-S. Liu*, **, Y.-J. Hsu*, **, S.-N. Zhao*, **, J.-S. Im*, **, Y.-C. Wu*, **, P.-Y. Lu*, ** (*Nat. Eng. Lab. For AMOLED Process Tech., China, **Shenzhen China Star Optoelect. Semiconductor Display Tech., China)

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AMD8 : Oxide TFT: Stability and Fundamental (2)

Fri., Dec. 14  14:50-16:10  Reception Hall 1

Chair: T. Kamiya (Tokyo Tech, Japan)
Co-Chair: S. Horita (JAIST, Japan)

AMD8-1 Invited Highly Stable High Mobility Oxide TFT for High Resolution AMOLED
J. B. Ko, S.-H. Lee, K. W. Park, J.-R. Lee*, W.-W. Park*, S.-H. K. Park (KAIST, Korea, *AVACO, Korea)

AMD8-2 Improvement of the Stability Under High Voltage and High Temperature Stress by Using Nitrogen Doped IGZO TFTs
I.-T. Cho, J. Noh, P. Yun, J. Jang, D. Lee, J.-H. Baeck, S.-W. Lee, K.-S. Park, S. Y. Yoon, J.-Y. Kwon*, I. Kang (LG Display, Korea, *Yonsei Univ., Korea)

AMD8-3 Development of Tunneling Contact a-IGZO TFT with Graphene Interlayer
L. Wang, L. Zhang*, X. Zhang*, Z. Zhu, H. Zhu (Visionox Tech., China, *Shenzhen Univ., China)

AMD8-4L High Stress Stability Imparted by Sn Addition Effect in High Mobility Amorphous IGZTO TFTs
M. Ochi, K. Nishiyama, Y. Teramae, H. Goto, T. Kugimiya (Kobe Steel, Japan)

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Poster AMDp1 : Oxide TFTs

Thu., Dec. 13  10:40-13:10  Event Hall

AMDp1-1 Organic Passivation Layer in Back-Channel-Etch Amorphous InGaZnO Thin Film Transistor with Color Filter on Array Structure for Large Size High Resolution Display Application
G. T. Li*'**, W. Wu**, F. Zhu**, J. J. Liu**, Y. H. Meng**, S. Li**, H. Zhou* (*Peking Univ., China, **Shenzhen China Star Optoelect. Tech., China)

AMDp1-2 Detecting Thickness of Accumulation Layer in a-IGZO Thin Film Transistors by Kelvin Probe Force Microscopy
X. Shi*'**, C. Lu*, D. Geng*, N. Lu*, J. Wang*, L. Li*, M. Liu* (*Chinese Ac. of Sci., China, **Univ. of Chinese Ac. of Sci., China)

AMDp1-3 Highly Stable Self-Aligned Coplanar Bulk Accumulation a-IGZO TFTs Under High Temperature Bias Stress
H. Kim, S. Lee, J. Lee, J. Jang (Kyung Hee Univ., Korea)

AMDp1-4 In-O-N Thin-film Transistors with Superior Stability
H.-D. Kim, H.-S. Kim (Chungnam Nat. Univ., Korea)

AMDp1-5 Comparator for Integrated Readout Circuits with a-IGZO TFTs
Y. Gong*'**, D. Geng*, Y. Su*, X. Shi*, C. Lu*, N. Lu*, L. Li*, M. Liu* (*Chinese Ac. of Sci., China, **Shandong Univ., China)

AMDp1-6 A Study on Degradation Mechanism of Flexible a-InGaZnO Thin Film Transistor Under Repetitive Bending Stress Using Simulation
K.-L. Han, H.-J. Jeong, B.-S. Kim, S. Oh, J.-S. Park (Hanyang Univ., Korea)

AMDp1-7 a-IGZO TFT Gate Driver Circuit for Suppressing Ripple Voltage without Pull-Down Unit
C. Y. Park, Y.-S. Kim (Sungkyunkwan Univ., Korea)

AMDp1-8 High Performance In-Ga-Zn-O Thin-Film Transistors via Microwave and Electron-Beam Radiation at Room Temperature
S.-C. Jang, H.-D. Kim, H.-S. Kim (Chungnam Nat. Univ., Korea)

AMDp1-9 Low-Temperature Processed IGTO Thin-Film Transistors with High Mobility by Reducing Deposition Pressure
H.-A. Kim, J. O. Kim, J. S. Hur, J. K. Jeong (Hanyang Univ., Korea)

AMDp1-10 IGZO TFT Gate Driver Circuit Capable of Compensating Threshold Voltage Shift for Pull-Down Unit
J. Oh, J.-H. Kim, K.-H. Lee*, E. S. Ha*, K. C. Park**, J.-H. Jeon***, Y.-S. Kim (Sungkyunkwan Univ., Korea, *Gyeonggi Sci. High School, Korea, **Konkuk Univ., Korea, ***Korea Aerospace Univ., Korea)

AMDp1-11 Double-Layered Indium-Zinc-Oxide Thin Film Transistors with an Addition of Hydrogen Peroxide
W. Jeon, B. Choi (Sungkyunkwan Univ., Korea)

AMDp1-12 Withdrawn

AMDp1-13L a-IGZO TFT Fabrication Using Advanced Imprint Lithography
H. Chae, S. Kim*, J. Cho, S. Cho (Sungkyunkwan Univ., Korea, *Samsung Inst. of Tech., Korea)

AMDp1-14L Solution-processed Metal Oxide Semiconductors Fabricated with Oxygen Radical Assisting Perchlorate Precursors through a New Reaction Route
P. Gao, L. Lan (South China Univ. of Tech., China)

AMDp1-15L Dynamic Bipolar Pulsed DC Sputtered IGZO for Mura-Free AMOLED Backplanes
Y.-C. P. Tsai, H.-W. Chang, J. Grillmayer, A. S. Bhoolokam*, J. B. Kim**, D. K. Yim**, M. Bender* (Applied Materials Taiwan, Taiwan, *Applied Materials, Germany, **Applied Materials, USA)

AMDp1-16L Development of Rare Metal Free Al/Ga-Sn-O/Al Cell Structure Switching Resistance Memory
S. Sugisaki, A. Kurasaki, R. Tanaka, T. Matsuda, M. Kimura (Ryukoku Univ., Japan)

AMDp1-17L Withdrawn

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Poster FMCp7 : Manufacturing and Materials of Oxide TFTs

Thu., Dec. 13  14:20-16:50

FMCp7-1L Deposition of Insulator Film by Inductively Coupled Plasma CVD System with Low Impedance Antennas
T. Sakai, M. Fujiwara, D. Azuma, S. Nakata, Y. Setoguchi, Y. Andoh (Nissin Elec., Japan)

FMCp7-2L Deposition of Crystalline InGaZnO Film at Low Temperature Process by Inductively Coupled Plasma Sputtering System
D. Matsuo, R. Miyanaga*, T. Ikeda, S. Kisida, Y. Setoguchi, Y. Andoh, M. Fujii*, Y. Uraoka* (Nissin Elec., Japan, *NAIST, Japan)

FMCp7-3L ZnO:Ga Thin Film with Hydrogen and Nitrogen Post Annealing and Applications in Transparent RRAM
L. W. Wang, C.-C Lin, S.-Y. Chu (Nat. Cheng Kung Univ., Taiwan)

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date	time	session		room
Thu., Dec. 13	10:40-13:10	AMDp1	Oxide TFTs	Event Hall
Thu., Dec. 13	14:20-16:50	FMCp7	Manufacturing and Materials of Oxide TFTs	Event Hall
Fri., Dec. 14	10:40-11:50	AMD6	Oxide TFT: Device	Reception Hall 1
	13:10-14:35	AMD7	Oxide TFT: Stability and Fundamental (1)
	14:50-16:10	AMD8	Oxide TFT: Stability and Fundamental (2)

AMD6-1	Invited Spreading Currents in Oxide TFTs S. Lee, T.-W. Kim*, J. Jang (Kyung Hee Univ., Korea)
AMD6-2	Invited Top-Gate Oxide TFT Technologies  for Advanced LCDs I. Suzumura, Y. Yamaguchi, H. Kawanago (Japan Display, Japan)
AMD6-3	Oxide Semiconductor Based Vertical TFT for Ultra High-resolution Backplane Technology K.-H. Lee, S. Lee, H.-I. Yeom, J.-B. Ko, C.-S. Hwang, S.-H. K. Park (KAIST, Korea, ETRI, Korea)

AMD7-1	Invited Electronic Structure and Defects  in Amorphous Oxide Semiconductor:A Comprehensive Review T. Kamiya, H. Kumomi, H. Hosono (Tokyo Tech, Japan)
AMD7-2	Enhancing Reliability of Amorphous In-Ga-Zn-O Thin Film Transistors by Nitrogen Doping T. Sung, K. Park, J. H. Kim, H.-W. Park, P. Yun, J. Noh, S. W. Lee, K.-S. Park, S. Y. Yoon, I. B. Kang, K.-B. Chung, H.-S. Kim, J.-Y. Kwon (Yonsei Univ., Korea, Chungnam Nat. Univ., Korea, Dongguk Univ., Korea, **LG Display, Korea)
AMD7-3	Simulation Study of Self-Heating Effects on Amorphous Oxide Semiconductor TFTs: Channel-Length Dependence K. Abe, M. Fujinaga, T. Kuwagaki (Silvaco Japan, Japan)
AMD7-4	A 31-in. 4K2K AMOLED Display Using High Mobility and Reliability Top-Gate Self-Aligned IGZO TFTs with Cu Electrode Z.-S. Liu, , Y.-J. Hsu, *, S.-N. Zhao, *, J.-S. Im, *, Y.-C. Wu, *, P.-Y. Lu, ** (Nat. Eng. Lab. For AMOLED Process Tech., China, *Shenzhen China Star Optoelect. Semiconductor Display Tech., China)

AMD8-1	Invited Highly Stable High Mobility Oxide TFT for High Resolution AMOLED J. B. Ko, S.-H. Lee, K. W. Park, J.-R. Lee, W.-W. Park, S.-H. K. Park (KAIST, Korea, *AVACO, Korea)
AMD8-2	Improvement of the Stability Under High Voltage and High Temperature Stress by Using Nitrogen Doped IGZO TFTs I.-T. Cho, J. Noh, P. Yun, J. Jang, D. Lee, J.-H. Baeck, S.-W. Lee, K.-S. Park, S. Y. Yoon, J.-Y. Kwon, I. Kang (LG Display, Korea, Yonsei Univ., Korea)
AMD8-3	Development of Tunneling Contact a-IGZO TFT with Graphene Interlayer L. Wang, L. Zhang, X. Zhang, Z. Zhu, H. Zhu (Visionox Tech., China, *Shenzhen Univ., China)
AMD8-4L	High Stress Stability Imparted by Sn Addition Effect in High Mobility Amorphous IGZTO TFTs M. Ochi, K. Nishiyama, Y. Teramae, H. Goto, T. Kugimiya (Kobe Steel, Japan)

AMDp1-1	Organic Passivation Layer in Back-Channel-Etch Amorphous InGaZnO Thin Film Transistor with Color Filter on Array Structure for Large Size High Resolution Display Application G. T. Li', W. Wu, F. Zhu, J. J. Liu, Y. H. Meng, S. Li, H. Zhou (Peking Univ., China, *Shenzhen China Star Optoelect. Tech., China)
AMDp1-2	Detecting Thickness of Accumulation Layer in a-IGZO Thin Film Transistors by Kelvin Probe Force Microscopy X. Shi', C. Lu, D. Geng, N. Lu, J. Wang, L. Li, M. Liu* (Chinese Ac. of Sci., China, *Univ. of Chinese Ac. of Sci., China)
AMDp1-3	Highly Stable Self-Aligned Coplanar Bulk Accumulation a-IGZO TFTs Under High Temperature Bias Stress H. Kim, S. Lee, J. Lee, J. Jang (Kyung Hee Univ., Korea)
AMDp1-4	In-O-N Thin-film Transistors with Superior Stability H.-D. Kim, H.-S. Kim (Chungnam Nat. Univ., Korea)
AMDp1-5	Comparator for Integrated Readout Circuits with a-IGZO TFTs Y. Gong', D. Geng, Y. Su, X. Shi, C. Lu, N. Lu, L. Li, M. Liu (Chinese Ac. of Sci., China, *Shandong Univ., China)
AMDp1-6	A Study on Degradation Mechanism of Flexible a-InGaZnO Thin Film Transistor Under Repetitive Bending Stress Using Simulation K.-L. Han, H.-J. Jeong, B.-S. Kim, S. Oh, J.-S. Park (Hanyang Univ., Korea)
AMDp1-7	a-IGZO TFT Gate Driver Circuit for Suppressing Ripple Voltage without Pull-Down Unit C. Y. Park, Y.-S. Kim (Sungkyunkwan Univ., Korea)
AMDp1-8	High Performance In-Ga-Zn-O Thin-Film Transistors via Microwave and Electron-Beam Radiation at Room Temperature S.-C. Jang, H.-D. Kim, H.-S. Kim (Chungnam Nat. Univ., Korea)
AMDp1-9	Low-Temperature Processed IGTO Thin-Film Transistors with High Mobility by Reducing Deposition Pressure H.-A. Kim, J. O. Kim, J. S. Hur, J. K. Jeong (Hanyang Univ., Korea)
AMDp1-10	IGZO TFT Gate Driver Circuit Capable of Compensating Threshold Voltage Shift for Pull-Down Unit J. Oh, J.-H. Kim, K.-H. Lee, E. S. Ha, K. C. Park, J.-H. Jeon, Y.-S. Kim (Sungkyunkwan Univ., Korea, Gyeonggi Sci. High School, Korea, Konkuk Univ., Korea, *Korea Aerospace Univ., Korea)
AMDp1-11	Double-Layered Indium-Zinc-Oxide Thin Film Transistors with an Addition of Hydrogen Peroxide W. Jeon, B. Choi (Sungkyunkwan Univ., Korea)
AMDp1-12	Withdrawn
AMDp1-13L	a-IGZO TFT Fabrication Using Advanced Imprint Lithography H. Chae, S. Kim, J. Cho, S. Cho (Sungkyunkwan Univ., Korea, Samsung Inst. of Tech., Korea)
AMDp1-14L	Solution-processed Metal Oxide Semiconductors Fabricated with Oxygen Radical Assisting Perchlorate Precursors through a New Reaction Route P. Gao, L. Lan (South China Univ. of Tech., China)
AMDp1-15L	Dynamic Bipolar Pulsed DC Sputtered IGZO for Mura-Free AMOLED Backplanes Y.-C. P. Tsai, H.-W. Chang, J. Grillmayer, A. S. Bhoolokam, J. B. Kim, D. K. Yim, M. Bender (Applied Materials Taiwan, Taiwan, Applied Materials, Germany, *Applied Materials, USA)
AMDp1-16L	Development of Rare Metal Free Al/Ga-Sn-O/Al Cell Structure Switching Resistance Memory S. Sugisaki, A. Kurasaki, R. Tanaka, T. Matsuda, M. Kimura (Ryukoku Univ., Japan)
AMDp1-17L	Withdrawn

FMCp7-1L	Deposition of Insulator Film by Inductively Coupled Plasma CVD System with Low Impedance Antennas T. Sakai, M. Fujiwara, D. Azuma, S. Nakata, Y. Setoguchi, Y. Andoh (Nissin Elec., Japan)
FMCp7-2L	Deposition of Crystalline InGaZnO Film at Low Temperature Process by Inductively Coupled Plasma Sputtering System D. Matsuo, R. Miyanaga, T. Ikeda, S. Kisida, Y. Setoguchi, Y. Andoh, M. Fujii, Y. Uraoka* (Nissin Elec., Japan, *NAIST, Japan)
FMCp7-3L	ZnO:Ga Thin Film with Hydrogen and Nitrogen Post Annealing and Applications in Transparent RRAM L. W. Wang, C.-C Lin, S.-Y. Chu (Nat. Cheng Kung Univ., Taiwan)