IDW '18
Nagoya

Workshop on OLED Displays and Related Technologies

date time session   room
Wed., Dec. 12 13:20-14:40 OLED1 OLED Materials International Conference Room
15:00-16:20 OLED2 OLED Devices
16:40-18:00 OLED3 OLED Soluble Materials and Process Technologies
Thu., Dec. 13 9:00-10:20 OLED4 OLED Display
10:40-13:10 OLEDp1 OLED Poster Event Hall
10:40-13:10 OLEDp2 OLED/QDT Poster
Special Topics of Interest on Quantum Dot Technologies
Fri., Dec. 14 9:00-10:20 OLED5 OLED Device Technology
Special Topics of Interest on Quantum Dot Technologies
Room 432
10:40-12:10 PH2/OLED6 QD Phosphors and Devices
Special Topics of Interest on Quantum Dot Technologies
13:10-14:25 OLED7 OLED Advanced Technology Room 133

 

OLED1 : OLED Materials

Wed., Dec. 12  13:20-14:40  International Conference Room

Chair: T. Komatsu (JOLED, Japan)
Co-Chair: T. Ikuta (JNC, Japan)

OLED1-1 Invited High Performance Blue OLED by New Fluorescent Materials
Y. Nakano, T. Masuda, S. Tasaki, Y. Takahashi, H. Ito, T. Haketa, K. Okinaka, E. Kambe, Y. Kawamura, H. Kuma (Idemitsu Kosan, Japan)
OLED1-2 Invited High Efficiency and Low Efficiency Roll-Off Deep Blue TADF Emitter
D. H. Ahn, S. W. Kim, H. Lee, J. Y. Lee, J. H. Kwon (Kyung Hee Univ., Korea)
OLED1-3 Phosphorescent OLED Technologies with Breakthrough Spectral Emission for Automotive Lighting Applications
E. A. Margulies, P.-L. T. Boudreault, V. I. Adamovich, B. D. Alleyne, M. S. Weaver, J. J. Brown (Universal Display, USA)
OLED1-4 Invited Outcoupling Enhancement by Organic Materials Inside OLEDs: Control of Molecular Orientation and Refractive Index
D. Yokoyama (Yamagata Univ., Japan)

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OLED2 : OLED Devices

Wed., Dec. 12  15:00-16:20  International Conference Room

Chair: T. Uchida (Tokyo Polytechnic Univ., Japan)
Co-Chair: K. Kishino (Sony, Japan)

OLED2-1 Invited Recent Progress in Air-Stable Inverted OLEDs: Key Materials, Fabrication Process and Application to Flexible Display
H. Fukagawa, T. Sasaki, T. Oono, T. Shimizu (NHK, Japan)
OLED2-2 Dark Spot Growth and its Acceleration Factor in Organic Light-Emitting Diodes with Single or Multilayered Barrier Structure
T. Okada, A. Yoshida, T. Tsuji (Pioneer, Japan)
OLED2-3 Withdrawn
OLED2-4 Comparison of Multi Optical Simulation Methods for the Functional Color Layer
W. Kim, S. Lee, S. Kim, Y. Kim, M. Kwak, M. Jun, I. Kang (LG Display, Korea)
OLED2-5L A Modern Approach for Characterizing Burn-In Artifacts for High Dynamic Range Displays
J. S. Park, J. Kim, S. Jung, J. Langehennig*, D. Lee, B. Min (Samsung Elect., Korea, *Samsung Elect. America, USA)

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OLED3 : OLED Soluble Materials and Process Technologies

Wed., Dec. 12  16:40-18:00  International Conference Room

Chair: K. Nakayama (Osaka Univ., Japan)
Co-Chair: T. Tsuji (Pioneer, Japan)

OLED3-1 Invited Fundamentals and Device Performance of Polymer-OLED Materials
N. Akino, Y. Tsubata, D. Fukushima, S. Tanaka (Sumitomo Chem., Japan)
OLED3-2 Invited Ink-Jet Printed OLEDs for Display Applications
S. Stolz, K. M. Scheible, S. Meyer, A. Hayer, P. Hibon, M. Engel, R. Linge, B. Burkhart, N. Koenen, M. Hamburger, G. Béalle, H.-R. Tseng, M. Wucherer-Plietker, G. Bernatz, R. Anémian (Merck KGaA, Germany)
OLED3-3 Invited Important Technologies of Inkjet Printer and VF Unit for OLED Display Fabrication
T. Hayashi, A. Shimamura, Y. Konta, K. Oshima (Tokyo Electron Kyushu, Japan)
OLED3-4 Matrix Quantum Dot Light-Emitting Diodes Patterned by Photolithography Technology
C.-T. Chiu, S.-Y. Cheng, J.-T. Lian (Chunghwa Picture Tubes, Taiwan)

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OLED4 : OLED Display

Thu., Dec. 13  9:00-10:20  International Conference Room

Chair: Y. Kijima (Huawei Techs. Japan, Japan)
Co-Chair: H. Kuma (Idemitsu, Japan)

OLED4-1 Invited High Performance OLED and Its Application
T. Kim, K. Song, J. Kim, J. Park, H. Choi, K. Kim, C. Han, H. Choi, I. Kang (LG Display, Korea)
OLED4-2 Invited 4032ppi High-Resolution OLED Microdisplay
T. Fujii, C. Kon, Y. Motoyama, K. Shimizu, T. Shimayama, T. Yamazaki*, T. Kato*, S. Sakai**, K. Hashikaki**, K. Tanaka***, Y. Nakano*** (Sony Semiconductor Solutions, Japan, *Sony, Japan, **Sony LSI Design, Japan, ***Sony Semiconductor Manufacturing, Japan)
OLED4-3 High Transmission Opening Active Matrix OLED Display
M. Adachi, Y. Matsumoto, M. Gunji, N. Maeda, Y. Kimura, H. Kato, T. Nakanishi, A. Hasegawa, H. Tabatake (Japan Display, Japan)
OLED4-4 Influence of Power VDD IR Drop on Picture Quality
B. Lei, Y. Zheng, Y. Ma, P. Dang, Z. Duan (Visionox Tech., China)

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OLED5 : OLED Device Technology
Special Topics of Interest on Quantum Dot Technologies

Fri., Dec. 14  9:00-10:20  Room 432

Chair: T. Wakimoto (Merck PM, Japan)
Co-Chair: T. Shimizu (NHK, Japan)

OLED5-1 Invited Monochromatic LEDs Based on Perovskite Quantum Dots: Opportunities and Challenges
C.-J. Shih, S. Kumar, J. Jagielski (ETH Zurich, Switzerland)
OLED5-2 Negative Capacitance as a Diagnostic Tool for Recombination in Purple Quantum Dot LEDs
C. Blauth*'**, T. Hirai**, P. Mulvaney* (*Univ. of Melbourne, Australia, **CSIRO Manufacturing, Australia)
OLED5-3 Withdrawn
OLED5-4 High-Performance, Solution-Processed Quantum Dots Hybrid Light-Emitting Field-Effect Transistors
P. He, L. Lan, J. Peng (South China Univ. of Tech., China)
OLED5-5L Controllable Variations for High Performance Perovskite Light Emitting Diodes Device Fabrication in Solution Process
D. Y. Kim, D. H. Kwak, M. C. Suh (Kyung Hee Univ., Korea)

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PH2/OLED6 : QD Phosphors and Devices
Special Topics of Interest on Quantum Dot Technologies

Fri., Dec. 14  10:40-12:10  Room 432

Chair: R.-J. Xie (, Xiamen Univ., China)
Co-Chair: Y. Sakai (Mitsubishi Chem., Japan)

PH2/OLED6-1 Invited Narrow Band-Edge Emission from AgInS2 Semiconductor Quantum Dots by the Formation of Amorphous III-VI Semiconductor Shells
T. Uematsu (Osaka Univ., Japan)
PH2/OLED6-2 Novel Ligand Materials to Enhance Luminous Efficiency and Stability of Perovskite Quantum Dot
S.-Y. Cheng, C.-T. Chiu, J.-T. Lian, B.-K. Hsu*, T.-Y. Lin* (Chunghwa Picture Tubes, Taiwan, *Nat. Taiwan Ocean Univ., Taiwan)
PH2/OLED6-3 Improved Stability of CsPbBr3 Perovskite Quantum Dots by Suppressing the Interligand Proton Transfer and Applying the Polystyrene Coating
Y. Cai, Y. Li, R.-J. Xie (Xiamen Univ., China)
PH2/OLED6-4 Withdrawn
PH2/OLED6-5L Perovskite Quantum Dots with Enhanced Thermal Stability for Display Application
L. Sinatra, M. Lutfullin, M. Mahmud, J. Pan*, O. Bakr* (Quantum Solutions , Saudi Arabia, *King Abdullah Univ. of S&T, Saudi Arabia)
PH2/OLED6-6L Enhancement of Optical Intensity and Color Gamut in White OLED Display Using Photoresist Dispersed Quantum Dot/TiO2 Mixed Film
H.-J. Kim, H.-B. Yang, W. R. Kim*, Y. H. Kim*, M. S. Kwak*, Y.-J. Kim (Yonsei Univ., Korea, *LG Display, Korea)

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OLED7 : OLED Advanced Technology

Fri., Dec. 14  13:10-14:25  Room 133

Chair: M. Adachi (Japan Display, Japan)
Co-Chair: S. Aratani (Samsung Elect., Korea)

OLED7-1 Study of Viewing Angle on Fluorescence Dye Photo Resist for OLED Display
S. Kim, S. Lee, W. Kim, Y. Kim, M. Kwak, M. Jun, I. Kang (LG Display, Korea)
OLED7-2 High Transparency and High Reliability Transparent Cathode Fabricated by Thermal Evaporation for Transparent OLED Application
M.-G. Song, J. E. Yeom, K.-S. Kim, J. H. Kwon (Kyung Hee Univ., Korea)
OLED7-3 High Reliability Flexible Device with Atomic Layers Deposition Layers
G. T. Fu, L. Rui, W. Kan, N. Jing, W. J. Yuan, L. J. Jia, B. Y. Mei, H. Jing, H. H. Lun (Wuhan China Star Optoelect. Semiconductor Display Tech., China)
OLED7-4L A Study on the Improvement of POLED Panel Performance by Evaluation of PI and PAC Planarization Layer Characteristics
H. Park, K. Sung (LG Display, Korea)

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Poster OLEDp1 : OLED Poster

Thu., Dec. 13  10:40-13:10  Event Hall

OLEDp1-1 Blue Fluorescence Organic Light-Emitting Diode with Novel Anthracene Derivatives
T.-L. Chiu, C.-H. Chen*, B.-A. Fan*, J.-H. Lee*, L.-J. Ho*, M.-K. Leung* (Yuan Ze Univ., Taiwan, *Nat. Taiwan Univ., Taiwan)
OLEDp1-2 Optical Analysis of Circularly Polarized Emission in Surface-Treated Mesogenic Conjugate Polymer
D.-M. Lee, B.-J. Kang, J.-H. Woo, C.-J. Yu, J.-H. Kim (Hanyang Univ., Korea)
OLEDp1-3 An Excellent Performance of Pixel Definition Layer Effects on High Quality OLED Devices Fabricated by Inkjet Printing Process
K.-P. He, X.-X. Zhang, J. Tang, J.-S. Im (Shenzhen China Star Optoelect. Tech., China)
OLEDp1-4 Withdrawn
OLEDp1-5 Nickel Oxide Nano-Particles Replacing of Hole Injection Layer in Organic Light-Emitting Diodes
S. Lee*, G. Yun*, A. Turak**, W. Kim*'** (*Hoseo Univ., Korea, **McMaster Univ., Canada)
OLEDp1-6 MoO3 Nanoparticle Doped NiOx As a Hole Injection Layer for OLEDs
M. Kim, M. S. Cho, Y. S. Jung, D. Y. Jeon (KAIST, Korea)
OLEDp1-7 Designing Micro-Lens Structure for Enhancing the External Quantum Efficiency of OLED Device
D. Lee, S.-H. Song, J.-W. Yoo, S.-J. Park, J.-K. Song (Sungkyunkwan Univ., Korea)
OLEDp1-8 Reliability Improvement of Organic Light-Emitting Diodes Using Organic/Inorganic Hybrid Nanocomposite Passivation Film with Good Surface Hardness
B.-M. Park, H. J. Chang, K.-Y. Han (Dankook Univ., Korea)
OLEDp1-9 AMOLED Linear Crosstalk Failure Analysis and Improvement
Y. Zheng, B. Lei, P. Dang, J. Cheng, Z. Duan, X. Zhu, X. Huang (Visionox Tech., China)
OLEDp1-10 Techniques to Achieve 814 ppi in AMOLED Display for Virtual Reality
Q. Liu, L. Zhang, S. Hu, H. Zhu, X. Zhu (Kunshan Govisionox Optoelect., China)
OLEDp1-11L Study on Device Stability of Green PHOLEDs with Ultrathin Interface Tunneling Layer
S.-R. Park, J. Y. Lee, M. C. Suh (Kyung Hee Univ., Korea)
OLEDp1-12L Improvement of Viewing Angle Dependence with Random Wrinkle Structure inside TEOLED Showing Strong Microcavity Effect
S. H. Jung, N. S. Kim, I.-U. -D. Q. Muhammad, M. C. Suh (Kyung Hee Univ., Korea)
OLEDp1-13L Enhanced Field-Effect Mobility of Top-Gate Organic Transistors with Channel Length of 5 μm Using Solution-Processed MoO3 Hole Injection Layers
T. Aiba, T. Nagase, T. Kobayashi, Y. Sadamitsu*, H. Naito (Osaka Pref. Univ., Japan, *Nippon Kayaku, Japan)
OLEDp1-14L Modeling OLED Compensation Technology for OLED TV
S.-J. Tang, J. He, J. Ancich, T. Doodnauth (Ignis Innovation, Canada)
OLEDp1-15L Photo-Cross-Linkable Hole Transporting Material for Efficient Solution Processed Light Emitting Diode
Q. M. Saqib, S.-R. Park, M. C. Suh (Kyung Hee Univ., Korea)
OLEDp1-16L Full Roll-to-Roll Fabrication Process of Large-Area Flexible OLED with Silver-Nanowire Transparent Electrode
C. Kim, S. Jeong, S. M. Cho (Sungkyunkwan Univ., Korea)
OLEDp1-17L Optimization of Ir(ppy)3 Dopant Concentration to Variable Electron Injection Rates for High Efficiency OLED
D. J. Kwon, S. J. Park, S. H. Jang, Y. J. Kim (Yonsei Univ., Korea)

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Poster OLEDp2 : OLED/QDT Poster
Special Topics of Interest on Quantum Dot Technologies

Thu., Dec. 13  10:40-13:10  Event Hall

OLEDp2-1 Efficiency Improvement of Quantum Dot Light Emitting Diode by Using DMSO Treated PEDOT: PSS
T. J. Bae, S. H. Song, S. J. Park, S. S. Kim, J. K. Song (Sungkyunkwan Univ., Korea)
OLEDp2-2 Organic Electron Transport Layer for High Performance Green Inverted Quantum Dot Light Emitting Diodes
C. Y. Lee, H. W. Bae, K. J. Eun, N. N. Mude, J. H. Kwon (Kyung Hee Univ., Korea)
OLEDp2-3L A Charge Injection Model for QLEDs Based on Dynamic Equilibrium Conditions
S.-K. Kim, Y.-S. Kim (Hongik Univ., Korea)
OLEDp2-4L Metal Oxide Nanoparticles in an Electron Transport Layer for Efficient Charge Balance in Inverted Quantum Dot Light-Emitting Diodes
H. Kim, W. Lee, H. K. Chung, H. Chae (Sungkyunkwan Univ., Korea)
OLEDp2-5L High Brightness and Low Roll-Off Quantum-Dot Light Emitting Diodes Using Doped Metal Oxide Electron Transport Layer
Y. Lee, H.-M. Kim, J. Kim, J. Jang (Kyung Hee Univ., Korea)

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