Workshop on Active Matrix Displays


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Workshop on Active Matrix Displays

date time session room

Wed., Dec. 12 13:20-14:35 AMD1 8K Display Reception Hall 1

15:00-16:10 AMD2 Active-Matrix Micro-LED Display

Thu., Dec. 13 9:00-9:50 AMD3 Advanced Process OTFT

10:40-13:10 AMDp1 Oxide TFTs
Special Topics of Interest on Oxide-Semiconductor TFT Event Hall

10:40-13:10 AMDp2 Active-Matrix Devices

17:10-18:00 AMD4 High-Performance OTFT Reception Hall 1

Fri., Dec. 14 9:00-10:05 AMD5 Emerging TFT

10:40-11:50 AMD6 Oxide TFT: Device
Special Topics of Interest on Oxide-Semiconductor TFT

13:10-14:35 AMD7 Oxide TFT: Stability and Fundamental (1)
Special Topics of Interest on Oxide-Semiconductor TFT

14:50-16:10 AMD8 Oxide TFT: Stability and Fundamental (2)
Special Topics of Interest on Oxide-Semiconductor TFT

AMD1 : 8K Display

Wed., Dec. 12  13:20-14:35  Reception Hall 1

Chair: K. Nomoto (Sony, Japan)
Co-Chair: K. Omoto (Apple, Japan)

AMD1-1 Invited 8K Super Hi-Vision Broadcasting  and Related Display Technologies
H. Tsuji (NHK, Japan)

AMD1-2 Invited The World's First 85-in. 8K x 4K 120 Hz VA-LCD Driven by BCE IGZO GOA
L.-Q. Shi, Y.-F. Chou, Y.-C. Zhao, S.-J. Chen, F. Zhao, S.-M. Ge, Z.-J. Kong, F.-C. Xu, P. Du, C.-Y. Chiu, R. Lin (Shenzhen China Star Optoelect. Semiconductor Display Tech., China)

AMD1-3 Invited Current Status and Future Technology  for Large-Screen 8K IGZO Display
H. Kitagawa, Y. Hara, Y. Iwase, T. Kikuchi, J. Morinaga, H. Ohgami, H. Imai, T. Daitoh (Sharp, Japan)

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AMD2 : Active-Matrix Micro-LED Display

Wed., Dec. 12  15:00-16:10  Reception Hall 1

Chair: M. Inoue (Huawei Techs. Japan, Japan)
Co-Chair: H. Hamada (Kinki Univ., Japan)

AMD2-1 Withdrawn

AMD2-2 Invited Device Structure and Manufacturing Process for Highly Flexible Micro-LED Display
K. Kajiyama, Y. Suzuki, T. Hirano, Y. Yanagawa, K. Fukaya, N.Okura, A. Shimoura (V-Tech., Japan)

AMD2-3 A New Compensation Pixel Circuit for AMLED with a-IGZO TFTs
Y. Su, D. Geng, Y. Gong*, X. Shi, C. Lu, N. Lu, L. Li, M. Liu (Univ. of Chinese Ac. of Sci., China, *Shandong Univ., China)

AMD2-4L Invited Pixel Grouping Micro-LED Module  Based on Digital Electro-Optics Platform
C.-Y. Shieh, J. Yue, T. Lin, K. Tai (Jasper Display, Taiwan)

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AMD3 : Advanced Process OTFT

Thu., Dec. 13  9:00-9:50  Reception Hall 1

Chair: T. Okamoto (Univ. of Tokyo, Japan)
Co-Chair: Y. Fujisaki (NHK, Japan)

AMD3-1 Withdrawn

AMD3-2 Invited Industrialisation of OLCD: Manufacturing and Performance Attributes of OTFT-Based LCDs
P. Cain (FlexEnable, UK)

AMD3-3L Invited Inkjet-Printed Organic Transistor Circuits  for Sensor Applications
H. Matsui, R. Shiwaku, K. Nagamine, S. Tokito (Yamagata Univ., Japan)

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AMD4 : High-Performance OTFT

Thu., Dec. 13  17:10-18:00  Reception Hall 1

Chair: P. Cain (FlexEnable, UK)
Co-Chair: Y. Shibata (Tohoku Univ., Japan)

AMD4-1 Invited Equivalent-Circuit Approach  for the Interpretation of Modulus Spectra  of Organic Field-Effect Transistors
H. Naito, Y. Suenaga, T. Nagase, T. Kobayashi (Osaka Pref. Univ., Japan)

AMD4-2 Invited High Mobility Single-Crystalline Organic Semiconductors Exhibiting Chemical and Thermally Robustness
T. Okamoto*'** (*Univ. of Tokyo, Japan, **JST PRESTO, Japan)

AMD4-3 Withdrawn

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AMD5 : Emerging TFT

Fri., Dec. 14  9:00-10:05  Reception Hall 1

Chair: S.-H. K. Park (KAIST, Korea)
Co-Chair: T. Noguchi (Univ. of the Ryukyus, Japan)

AMD5-1 Invited Development of P-type Transparent Amorphous Semiconductor
J. Kim, T. Jun, J. Bang, K. Aoyama, H. Hosono (Tokyo Tech, Japan)

AMD5-2 Near-Infrared Thin Film Phototransistor with Energy Band-Tunable Zinc Oxynitride Semiconductor
H. M. Lee, H. J. Jeong, E. J. Park, Y. S. Rim*, J. S. Park (Hanyang Univ., Korea, *Sejong Univ., Korea)

AMD5-3 A 5.46-in. Advanced LTPS TFT-LCD Using Top-Gate Oxide TFT in Pixel
M. Uchida, M. Tada, K. Mochizuki, T. Tsunashima, H. Tanaka, T. Ito, H. Watakabe, A. Hanada, R. Kimura (Japan Display, Japan)

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AMD6 : Oxide TFT: Device
Special Topics of Interest on Oxide-Semiconductor TFT

Fri., Dec. 14  10:40-11:50  Reception Hall 1

Chair: J. Kim (Tokyo Tech, Japan)
Co-Chair: K. Takatori (Huawei Techs. Japan, Japan)

AMD6-1 Invited Spreading Currents in Oxide TFTs
S. Lee, T. -W. Kim*, J. Jang (Kyung Hee Univ., Korea, *Samsung Display, Korea)

AMD6-2 Invited Top-Gate Oxide TFT Technologies  for Advanced LCDs
I. Suzumura, Y. Yamaguchi, H. Kawanago (Japan Display, Japan)

AMD6-3 Oxide Semiconductor Based Vertical TFT for Ultra High-Resolution Backplane Technology
K.-H. Lee, S. Lee, H.-I. Yeom, J.-B. Ko, C.-S. Hwang*, S.-H. K. Park (KAIST, Korea, *ETRI, Korea)

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AMD7 : Oxide TFT: Stability and Fundamental (1)
Special Topics of Interest on Oxide-Semiconductor TFT

Fri., Dec. 14  13:10-14:35  Reception Hall 1

Chair: I. Suzumura (Japan Display, Japan)
Co-Chair: H. Kumomi (Tokyo Tech, Japan)

AMD7-1 Invited Electronic Structure and Defects  in Amorphous Oxide Semiconductor: A Comprehensive Review
T. Kamiya, H. Kumomi, H. Hosono (Tokyo Tech, Japan)

AMD7-2 Enhancing Reliability of Amorphous In-Ga-Zn-O Thin Film Transistors by Nitrogen Doping
T. Sung, K. Park, J. H. Kim*, H.-W. Park**, P. Yun***, J. Noh***, S. W. Lee***, K.-S. Park***, S. Y. Yoon***, I. B. Kang***, K.-B. Chung**, H.-S. Kim*, J.-Y. Kwon (Yonsei Univ., Korea, *Chungnam Nat. Univ., Korea, **Dongguk Univ., Korea, ***LG Display, Korea)

AMD7-3 Simulation Study of Self-Heating Effects on Amorphous Oxide Semiconductor TFTs: Channel-Length Dependence
K. Abe, M. Fujinaga, T. Kuwagaki (Silvaco Japan, Japan)

AMD7-4 A 31-in. 4K2K AMOLED Display Using High Mobility and Reliability Top-Gate Self-Aligned IGZO TFTs with Cu Electrode
Z.-S. Liu*'**, Y.-J. Hsu*'**, S.-N. Zhao*'**, J.-S. Im*'**, Y.-C. Wu*'**, P.-Y. Lu*'** (*Nat. Eng. Lab. For AMOLED Process Tech., China, **Shenzhen China Star Optoelect. Semiconductor Display Tech., China)

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AMD8 : Oxide TFT: Stability and Fundamental (2)
Special Topics of Interest on Oxide-Semiconductor TFT

Fri., Dec. 14  14:50-16:10  Reception Hall 1

Chair: T. Kamiya (Tokyo Tech, Japan)
Co-Chair: S. Horita (JAIST, Japan)

AMD8-1 Invited Highly Stable High Mobility Oxide TFT for High Resolution AMOLED
J. B. Ko, S.-H. Lee, K. W. Park, J.-R. Lee*, W.-W. Park*, S.-H. K. Park (KAIST, Korea, *AVACO, Korea)

AMD8-2 Improvement of the Stability Under High Voltage and High Temperature Stress by Using Nitrogen Doped IGZO TFTs
I.-T. Cho, J. Noh, P. Yun, J. Jang, D. Lee, J.-H. Baeck, S.-W. Lee, K.-S. Park, S. Y. Yoon, J.-Y. Kwon*, I. Kang (LG Display, Korea, *Yonsei Univ., Korea)

AMD8-3 Development of Tunneling Contact a-IGZO TFT with Graphene Interlayer
L. Wang, L. Zhang*, X. Zhang*, Z. Zhu, H. Zhu (Visionox Tech., China, *Shenzhen Univ., China)

AMD8-4L High Stress Stability Imparted by Sn Addition Effect in High Mobility Amorphous IGZTO TFTs
M. Ochi, K. Nishiyama, Y. Teramae, H. Goto, T. Kugimiya (Kobe Steel, Japan)

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Poster AMDp1 : Oxide TFTs
Special Topics of Interest on Oxide-Semiconductor TFT

Thu., Dec. 13  10:40-13:10  Event Hall

AMDp1-1 Organic Passivation Layer in Back-Channel-Etch Amorphous InGaZnO Thin Film Transistor with Color Filter on Array Structure for Large Size High Resolution Display Application
G. T. Li*'**, W. Wu**, F. Zhu**, J. J. Liu**, Y. H. Meng**, S. Li**, H. Zhou* (*Peking Univ., China, **Shenzhen China Star Optoelect. Tech., China)

AMDp1-2 Detecting Thickness of Accumulation Layer in a-IGZO Thin Film Transistors by Kelvin Probe Force Microscopy
X. Shi*'**, C. Lu*, D. Geng*, N. Lu*, J. Wang*, L. Li*, M. Liu* (*Chinese Ac. of Sci., China, **Univ. of Chinese Ac. of Sci., China)

AMDp1-3 Highly Stable Self-Aligned Coplanar Bulk Accumulation a-IGZO TFTs Under High Temperature Bias Stress
H. Kim, S. Lee, J. Lee, J. Jang (Kyung Hee Univ., Korea)

AMDp1-4 In-O-N Thin-film Transistors with Superior Stability
H.-D. Kim, H.-S. Kim (Chungnam Nat. Univ., Korea)

AMDp1-5 Comparator for Integrated Readout Circuits with a-IGZO TFTs
Y. Gong*'**, D. Geng*, Y. Su*, X. Shi*, C. Lu*, N. Lu*, J.Chen**, L. Li*, M. Liu* (*Chinese Ac. of Sci., China, **Shandong Univ., China)

AMDp1-6 A Study on Degradation Mechanism of Flexible a-InGaZnO Thin Film Transistor Under Repetitive Bending Stress Using Simulation
K.-L. Han, H.-J. Jeong, B.-S. Kim, S. Oh, J.-S. Park (Hanyang Univ., Korea)

AMDp1-7 a-IGZO TFT Gate Driver Circuit for Suppressing Ripple Voltage without Pull-Down Unit
C. Y. Park, Y.-S. Kim (Sungkyunkwan Univ., Korea)

AMDp1-8 High Performance In-Ga-Zn-O Thin-Film Transistors via Microwave and Electron-Beam Radiation at Room Temperature
S.-C. Jang, H.-D. Kim, H.-S. Kim (Chungnam Nat. Univ., Korea)

AMDp1-9 Low-Temperature Processed IGTO Thin-Film Transistors with High Mobility by Reducing Deposition Pressure
H.-A. Kim, J. O. Kim, J. S. Hur, J. K. Jeong (Hanyang Univ., Korea)

AMDp1-10 IGZO TFT Gate Driver Circuit Capable of Compensating Threshold Voltage Shift for Pull-Down Unit
J. Oh, J.-H. Kim, K.-H. Lee*, E. S. Ha*, K. C. Park**, J.-H. Jeon***, Y.-S. Kim (Sungkyunkwan Univ., Korea, *Gyeonggi Sci. High School, Korea, **Konkuk Univ., Korea, ***Korea Aerospace Univ., Korea)

AMDp1-11 Double-Layered Indium-Zinc-Oxide Thin Film Transistors with an Addition of Hydrogen Peroxide
W. Jeon, B. Choi (Sungkyunkwan Univ., Korea)

AMDp1-12 Withdrawn

AMDp1-13L a-IGZO TFT Fabrication Using Advanced Imprint Lithography
H. Chae, S. Kim*, J. Cho, S. Cho (Sungkyunkwan Univ., Korea, *Samsung Inst. of Tech., Korea)

AMDp1-14L Solution-processed Metal Oxide Semiconductors Fabricated with Oxygen Radical Assisting Perchlorate Precursors through a New Reaction Route
P. Gao, L. Lan (South China Univ. of Tech., China)

AMDp1-15L Dynamic Bipolar Pulsed DC Sputtered IGZO for Mura-Free AMOLED Backplanes
Y.-C. P. Tsai, H.-W. Chang, J. Grillmayer, A. S. Bhoolokam*, J. B. Kim**, D. K. Yim**, M. Bender* (Applied Materials Taiwan, Taiwan, *Applied Materials, Germany, **Applied Materials, USA)

AMDp1-16L Development of Rare Metal Free Al/Ga-Sn-O/Al Cell Structure Switching Resistance Memory
S. Sugisaki, A. Kurasaki, R. Tanaka, T. Matsuda, M. Kimura (Ryukoku Univ., Japan)

AMDp1-17L Withdrawn

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Poster AMDp2 : Active-Matrix Devices

Thu., Dec. 13  10:40-13:10  Event Hall

AMDp2-1 Corner and Binning Model Simulation of TFT for GOA Driver Circuit in G8.6 Large-Size TFT-LCDs
Q.-H. Mo, A.-T. Cho, J. Hsu, K.-J. Liu, Justin, Y.-Q. Hu, W. Chen, Y. Lu , X.-B. Fan*, Scott*, L.-F. Wu* (Chongqing HKC Optoelect. Tech., China, *Huada Empyrean Softwere, China)

AMDp2-2 Analysis of CMOS Inverters on AC Operation Formed by Low Temperature Poly-Silicon TFTs with Metal Source-Drain Using BLDA
K. Lee, K. Shimai, W. Choi, T. Okada*, T. Noguchi* (Nihon Synopsys, Japan, *Univ. of the Ryukyus, Japan)

AMDp2-3 New Pixel Circuit with Parallel Addressing Scheme to Compensate for Variations of LTPS TFTs for AMOLED Displays
J.-H. Chang, P.-S. Chen, C.-L. Lin (Nat. Cheng Kung Univ., Taiwan)

AMDp2-4 Withdrawn

AMDp2-5 A Novel Method to Modify Over-Current Protection Threshold Current Miss Trigger Problem in Gate Driver on Array TFT-LCD
X. Lv, S. Chen, P. Chiang, L. Zeng, J. Zhu, W. Shao, Q. Liu, S. Xi, L. Shi, Y. Chou, M. Chen, C. Chiu, R. Lin (Shenzhen China Star Optoelect. Semiconductor Display Tech., China)

AMDp2-6 Pixel Circuit to Prevent Flicker Using Voltage Programming Method for AMOLED Displays
Y.-C. Chu, L.-J. Chen, C.-L. Lin (Nat. Cheng Kung Univ., Taiwan)

AMDp2-7 High Performance Pentacene TFTs with a Solution Processed PMMA/AlZrO_X Gate Dielectric
K.-M. Jung, J. Oh, J. M.Kim, K. C. Park*, J.-H. Jeon**, Y.-S. Kim (Sungkyunkwan Univ., Korea, *Konkuk Univ., Korea, **Korea Aerospace Univ., Korea)

AMDp2-8 Collocation of Differential Circle and Film Filter on Embedded Luminance Sensor
S.-B. Liu, J. C. Zhang, W. F. Fan, C.-T. Liao, H.-C. Lai, T.-C. Chung (InfoVision Optoelect., China)

AMDp2-9 A New Formation of Multi-Layered n⁺ Silicon Films Using Four-Mask Process Architecture for Image Sticking Improvement in 32-in. TV Product
F. Y. Yang, A.-T. Cho, J. Hsu, Z. Liu, K.-J. Liu, Q.-H. Mo, W. Chen, Y. Lu (Chongqing HKC Optoelect. Tech., China)

AMDp2-10 A Method to Reduce N^⁺ Tail in Four-Mask Process of Gen 8.6 LCDs
T. Fu, J. Hsu, J. Zhou, B. Ge, M. Li, Y. Yao, Y. Lu, W. Chen (Chongqing HKC Optoelect. Tech., China)

AMDp2-11L High Quality 75-in. 8K4K 120 Hz VA-LCD Driven by a-Si TFT Gate Driving Circuit
L.-Q. Shi, Y.-F. Chou, Y.-C. Zhao, X.-W. Lv, M. Wang, N. Zhang, J.-J. Yu, J.-S. Lee, W.-F. Li, X. Li, F. Zhao, Y.-X. Wang, Y.-L. Lin, H.-Y. Xu, C.-Y. Chiu, R. Lin (Shenzhen China Star Optoelect. Semiconductor Display Tech., China)

AMDp2-12L Enhanced Performance of Solution-Processable Organic Floating-Gate Transistor Memories Using Binary Small Molecules Dispersed Polymer Storage Layers
H. Abe, T. Nagase, T. Kobayashi, H. Naito (Osaka Pref. Univ., Japan)

AMDp2-13L The Methods to Reduce the RC Delay Issues for the Real-Time External Compensation AMOLED Circuit
C.-H. Lin, Y.-H. Tai (Nat. Chiao Tung Univ., Taiwan)

AMDp2-14L GOA Drived 31-in. AMOLED Display with 3 mm Border
Y. Xue*'**, B. Han**, C. Nie**, G. Chaw** (*Peking Univ., China, **Shenzhen China Star Optoelect. Semiconductor Display Tech., China)

AMDp2-15L Proposal of Stable Laser Crystallization of Si Film for Flexible Panel
R. Nakatsura, Y. Ishiki, T. Okada, T. Noguchi (Univ. of the Ryukyus, Japan)

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date	time	session		room
Wed., Dec. 12	13:20-14:35	AMD1	8K Display	Reception Hall 1
Wed., Dec. 12	15:00-16:10	AMD2	Active-Matrix Micro-LED Display
Thu., Dec. 13	9:00-9:50	AMD3	Advanced Process OTFT
	10:40-13:10	AMDp1	Oxide TFTs Special Topics of Interest on Oxide-Semiconductor TFT	Event Hall
	10:40-13:10	AMDp2	Active-Matrix Devices	Event Hall
	17:10-18:00	AMD4	High-Performance OTFT	Reception Hall 1
Fri., Dec. 14	9:00-10:05	AMD5	Emerging TFT
	10:40-11:50	AMD6	Oxide TFT: Device Special Topics of Interest on Oxide-Semiconductor TFT
	13:10-14:35	AMD7	Oxide TFT: Stability and Fundamental (1) Special Topics of Interest on Oxide-Semiconductor TFT
	14:50-16:10	AMD8	Oxide TFT: Stability and Fundamental (2) Special Topics of Interest on Oxide-Semiconductor TFT

AMD1-1	Invited 8K Super Hi-Vision Broadcasting  and Related Display Technologies H. Tsuji (NHK, Japan)
AMD1-2	Invited The World's First 85-in. 8K x 4K 120 Hz VA-LCD Driven by BCE IGZO GOA L.-Q. Shi, Y.-F. Chou, Y.-C. Zhao, S.-J. Chen, F. Zhao, S.-M. Ge, Z.-J. Kong, F.-C. Xu, P. Du, C.-Y. Chiu, R. Lin (Shenzhen China Star Optoelect. Semiconductor Display Tech., China)
AMD1-3	Invited Current Status and Future Technology  for Large-Screen 8K IGZO Display H. Kitagawa, Y. Hara, Y. Iwase, T. Kikuchi, J. Morinaga, H. Ohgami, H. Imai, T. Daitoh (Sharp, Japan)

AMD2-1	Withdrawn
AMD2-2	Invited Device Structure and Manufacturing Process for Highly Flexible Micro-LED Display K. Kajiyama, Y. Suzuki, T. Hirano, Y. Yanagawa, K. Fukaya, N.Okura, A. Shimoura (V-Tech., Japan)
AMD2-3	A New Compensation Pixel Circuit for AMLED with a-IGZO TFTs Y. Su, D. Geng, Y. Gong, X. Shi, C. Lu, N. Lu, L. Li, M. Liu (Univ. of Chinese Ac. of Sci., China, Shandong Univ., China)
AMD2-4L	Invited Pixel Grouping Micro-LED Module  Based on Digital Electro-Optics Platform C.-Y. Shieh, J. Yue, T. Lin, K. Tai (Jasper Display, Taiwan)

AMD3-1	Withdrawn
AMD3-2	Invited Industrialisation of OLCD: Manufacturing and Performance Attributes of OTFT-Based LCDs P. Cain (FlexEnable, UK)
AMD3-3L	Invited Inkjet-Printed Organic Transistor Circuits  for Sensor Applications H. Matsui, R. Shiwaku, K. Nagamine, S. Tokito (Yamagata Univ., Japan)

AMD4-1	Invited Equivalent-Circuit Approach  for the Interpretation of Modulus Spectra  of Organic Field-Effect Transistors H. Naito, Y. Suenaga, T. Nagase, T. Kobayashi (Osaka Pref. Univ., Japan)
AMD4-2	Invited High Mobility Single-Crystalline Organic Semiconductors Exhibiting Chemical and Thermally Robustness T. Okamoto'* (Univ. of Tokyo, Japan, *JST PRESTO, Japan)
AMD4-3	Withdrawn

AMD5-1	Invited Development of P-type Transparent Amorphous Semiconductor J. Kim, T. Jun, J. Bang, K. Aoyama, H. Hosono (Tokyo Tech, Japan)
AMD5-2	Near-Infrared Thin Film Phototransistor with Energy Band-Tunable Zinc Oxynitride Semiconductor H. M. Lee, H. J. Jeong, E. J. Park, Y. S. Rim, J. S. Park (Hanyang Univ., Korea, Sejong Univ., Korea)
AMD5-3	A 5.46-in. Advanced LTPS TFT-LCD Using Top-Gate Oxide TFT in Pixel M. Uchida, M. Tada, K. Mochizuki, T. Tsunashima, H. Tanaka, T. Ito, H. Watakabe, A. Hanada, R. Kimura (Japan Display, Japan)

AMD6-1	Invited Spreading Currents in Oxide TFTs S. Lee, T. -W. Kim, J. Jang (Kyung Hee Univ., Korea, Samsung Display, Korea)
AMD6-2	Invited Top-Gate Oxide TFT Technologies  for Advanced LCDs I. Suzumura, Y. Yamaguchi, H. Kawanago (Japan Display, Japan)
AMD6-3	Oxide Semiconductor Based Vertical TFT for Ultra High-Resolution Backplane Technology K.-H. Lee, S. Lee, H.-I. Yeom, J.-B. Ko, C.-S. Hwang, S.-H. K. Park (KAIST, Korea, ETRI, Korea)

AMD7-1	Invited Electronic Structure and Defects  in Amorphous Oxide Semiconductor: A Comprehensive Review T. Kamiya, H. Kumomi, H. Hosono (Tokyo Tech, Japan)
AMD7-2	Enhancing Reliability of Amorphous In-Ga-Zn-O Thin Film Transistors by Nitrogen Doping T. Sung, K. Park, J. H. Kim, H.-W. Park, P. Yun, J. Noh, S. W. Lee, K.-S. Park, S. Y. Yoon, I. B. Kang, K.-B. Chung, H.-S. Kim, J.-Y. Kwon (Yonsei Univ., Korea, Chungnam Nat. Univ., Korea, Dongguk Univ., Korea, **LG Display, Korea)
AMD7-3	Simulation Study of Self-Heating Effects on Amorphous Oxide Semiconductor TFTs: Channel-Length Dependence K. Abe, M. Fujinaga, T. Kuwagaki (Silvaco Japan, Japan)
AMD7-4	A 31-in. 4K2K AMOLED Display Using High Mobility and Reliability Top-Gate Self-Aligned IGZO TFTs with Cu Electrode Z.-S. Liu', Y.-J. Hsu'*, S.-N. Zhao'*, J.-S. Im'*, Y.-C. Wu'*, P.-Y. Lu'** (Nat. Eng. Lab. For AMOLED Process Tech., China, *Shenzhen China Star Optoelect. Semiconductor Display Tech., China)

AMD8-1	Invited Highly Stable High Mobility Oxide TFT for High Resolution AMOLED J. B. Ko, S.-H. Lee, K. W. Park, J.-R. Lee, W.-W. Park, S.-H. K. Park (KAIST, Korea, *AVACO, Korea)
AMD8-2	Improvement of the Stability Under High Voltage and High Temperature Stress by Using Nitrogen Doped IGZO TFTs I.-T. Cho, J. Noh, P. Yun, J. Jang, D. Lee, J.-H. Baeck, S.-W. Lee, K.-S. Park, S. Y. Yoon, J.-Y. Kwon, I. Kang (LG Display, Korea, Yonsei Univ., Korea)
AMD8-3	Development of Tunneling Contact a-IGZO TFT with Graphene Interlayer L. Wang, L. Zhang, X. Zhang, Z. Zhu, H. Zhu (Visionox Tech., China, *Shenzhen Univ., China)
AMD8-4L	High Stress Stability Imparted by Sn Addition Effect in High Mobility Amorphous IGZTO TFTs M. Ochi, K. Nishiyama, Y. Teramae, H. Goto, T. Kugimiya (Kobe Steel, Japan)

AMDp1-1	Organic Passivation Layer in Back-Channel-Etch Amorphous InGaZnO Thin Film Transistor with Color Filter on Array Structure for Large Size High Resolution Display Application G. T. Li', W. Wu, F. Zhu, J. J. Liu, Y. H. Meng, S. Li, H. Zhou (Peking Univ., China, *Shenzhen China Star Optoelect. Tech., China)
AMDp1-2	Detecting Thickness of Accumulation Layer in a-IGZO Thin Film Transistors by Kelvin Probe Force Microscopy X. Shi', C. Lu, D. Geng, N. Lu, J. Wang, L. Li, M. Liu* (Chinese Ac. of Sci., China, *Univ. of Chinese Ac. of Sci., China)
AMDp1-3	Highly Stable Self-Aligned Coplanar Bulk Accumulation a-IGZO TFTs Under High Temperature Bias Stress H. Kim, S. Lee, J. Lee, J. Jang (Kyung Hee Univ., Korea)
AMDp1-4	In-O-N Thin-film Transistors with Superior Stability H.-D. Kim, H.-S. Kim (Chungnam Nat. Univ., Korea)
AMDp1-5	Comparator for Integrated Readout Circuits with a-IGZO TFTs Y. Gong', D. Geng, Y. Su, X. Shi, C. Lu, N. Lu, J.Chen*, L. Li, M. Liu* (Chinese Ac. of Sci., China, *Shandong Univ., China)
AMDp1-6	A Study on Degradation Mechanism of Flexible a-InGaZnO Thin Film Transistor Under Repetitive Bending Stress Using Simulation K.-L. Han, H.-J. Jeong, B.-S. Kim, S. Oh, J.-S. Park (Hanyang Univ., Korea)
AMDp1-7	a-IGZO TFT Gate Driver Circuit for Suppressing Ripple Voltage without Pull-Down Unit C. Y. Park, Y.-S. Kim (Sungkyunkwan Univ., Korea)
AMDp1-8	High Performance In-Ga-Zn-O Thin-Film Transistors via Microwave and Electron-Beam Radiation at Room Temperature S.-C. Jang, H.-D. Kim, H.-S. Kim (Chungnam Nat. Univ., Korea)
AMDp1-9	Low-Temperature Processed IGTO Thin-Film Transistors with High Mobility by Reducing Deposition Pressure H.-A. Kim, J. O. Kim, J. S. Hur, J. K. Jeong (Hanyang Univ., Korea)
AMDp1-10	IGZO TFT Gate Driver Circuit Capable of Compensating Threshold Voltage Shift for Pull-Down Unit J. Oh, J.-H. Kim, K.-H. Lee, E. S. Ha, K. C. Park, J.-H. Jeon, Y.-S. Kim (Sungkyunkwan Univ., Korea, Gyeonggi Sci. High School, Korea, Konkuk Univ., Korea, *Korea Aerospace Univ., Korea)
AMDp1-11	Double-Layered Indium-Zinc-Oxide Thin Film Transistors with an Addition of Hydrogen Peroxide W. Jeon, B. Choi (Sungkyunkwan Univ., Korea)
AMDp1-12	Withdrawn
AMDp1-13L	a-IGZO TFT Fabrication Using Advanced Imprint Lithography H. Chae, S. Kim, J. Cho, S. Cho (Sungkyunkwan Univ., Korea, Samsung Inst. of Tech., Korea)
AMDp1-14L	Solution-processed Metal Oxide Semiconductors Fabricated with Oxygen Radical Assisting Perchlorate Precursors through a New Reaction Route P. Gao, L. Lan (South China Univ. of Tech., China)
AMDp1-15L	Dynamic Bipolar Pulsed DC Sputtered IGZO for Mura-Free AMOLED Backplanes Y.-C. P. Tsai, H.-W. Chang, J. Grillmayer, A. S. Bhoolokam, J. B. Kim, D. K. Yim, M. Bender (Applied Materials Taiwan, Taiwan, Applied Materials, Germany, *Applied Materials, USA)
AMDp1-16L	Development of Rare Metal Free Al/Ga-Sn-O/Al Cell Structure Switching Resistance Memory S. Sugisaki, A. Kurasaki, R. Tanaka, T. Matsuda, M. Kimura (Ryukoku Univ., Japan)
AMDp1-17L	Withdrawn

AMDp2-1	Corner and Binning Model Simulation of TFT for GOA Driver Circuit in G8.6 Large-Size TFT-LCDs Q.-H. Mo, A.-T. Cho, J. Hsu, K.-J. Liu, Justin, Y.-Q. Hu, W. Chen, Y. Lu , X.-B. Fan, Scott, L.-F. Wu* (Chongqing HKC Optoelect. Tech., China, *Huada Empyrean Softwere, China)
AMDp2-2	Analysis of CMOS Inverters on AC Operation Formed by Low Temperature Poly-Silicon TFTs with Metal Source-Drain Using BLDA K. Lee, K. Shimai, W. Choi, T. Okada, T. Noguchi (Nihon Synopsys, Japan, *Univ. of the Ryukyus, Japan)
AMDp2-3	New Pixel Circuit with Parallel Addressing Scheme to Compensate for Variations of LTPS TFTs for AMOLED Displays J.-H. Chang, P.-S. Chen, C.-L. Lin (Nat. Cheng Kung Univ., Taiwan)
AMDp2-4	Withdrawn
AMDp2-5	A Novel Method to Modify Over-Current Protection Threshold Current Miss Trigger Problem in Gate Driver on Array TFT-LCD X. Lv, S. Chen, P. Chiang, L. Zeng, J. Zhu, W. Shao, Q. Liu, S. Xi, L. Shi, Y. Chou, M. Chen, C. Chiu, R. Lin (Shenzhen China Star Optoelect. Semiconductor Display Tech., China)
AMDp2-6	Pixel Circuit to Prevent Flicker Using Voltage Programming Method for AMOLED Displays Y.-C. Chu, L.-J. Chen, C.-L. Lin (Nat. Cheng Kung Univ., Taiwan)
AMDp2-7	High Performance Pentacene TFTs with a Solution Processed PMMA/AlZrO_X Gate Dielectric K.-M. Jung, J. Oh, J. M.Kim, K. C. Park, J.-H. Jeon, Y.-S. Kim (Sungkyunkwan Univ., Korea, Konkuk Univ., Korea, **Korea Aerospace Univ., Korea)
AMDp2-8	Collocation of Differential Circle and Film Filter on Embedded Luminance Sensor S.-B. Liu, J. C. Zhang, W. F. Fan, C.-T. Liao, H.-C. Lai, T.-C. Chung (InfoVision Optoelect., China)
AMDp2-9	A New Formation of Multi-Layered n⁺ Silicon Films Using Four-Mask Process Architecture for Image Sticking Improvement in 32-in. TV Product F. Y. Yang, A.-T. Cho, J. Hsu, Z. Liu, K.-J. Liu, Q.-H. Mo, W. Chen, Y. Lu (Chongqing HKC Optoelect. Tech., China)
AMDp2-10	A Method to Reduce N^⁺ Tail in Four-Mask Process of Gen 8.6 LCDs T. Fu, J. Hsu, J. Zhou, B. Ge, M. Li, Y. Yao, Y. Lu, W. Chen (Chongqing HKC Optoelect. Tech., China)
AMDp2-11L	High Quality 75-in. 8K4K 120 Hz VA-LCD Driven by a-Si TFT Gate Driving Circuit L.-Q. Shi, Y.-F. Chou, Y.-C. Zhao, X.-W. Lv, M. Wang, N. Zhang, J.-J. Yu, J.-S. Lee, W.-F. Li, X. Li, F. Zhao, Y.-X. Wang, Y.-L. Lin, H.-Y. Xu, C.-Y. Chiu, R. Lin (Shenzhen China Star Optoelect. Semiconductor Display Tech., China)
AMDp2-12L	Enhanced Performance of Solution-Processable Organic Floating-Gate Transistor Memories Using Binary Small Molecules Dispersed Polymer Storage Layers H. Abe, T. Nagase, T. Kobayashi, H. Naito (Osaka Pref. Univ., Japan)
AMDp2-13L	The Methods to Reduce the RC Delay Issues for the Real-Time External Compensation AMOLED Circuit C.-H. Lin, Y.-H. Tai (Nat. Chiao Tung Univ., Taiwan)
AMDp2-14L	GOA Drived 31-in. AMOLED Display with 3 mm Border Y. Xue', B. Han, C. Nie, G. Chaw* (Peking Univ., China, *Shenzhen China Star Optoelect. Semiconductor Display Tech., China)
AMDp2-15L	Proposal of Stable Laser Crystallization of Si Film for Flexible Panel R. Nakatsura, Y. Ishiki, T. Okada, T. Noguchi (Univ. of the Ryukyus, Japan)