IDW '17
Sendai

Workshop on Active Matrix Displays

 

date time session   room
Wed., Dec. 6 13:10-14:15 AMD1 Oxide TFT: Advanced Devices
Special Topics of Interest on Oxide-Semiconductor TFT
Tachibana Conference Hall
Thu., Dec. 7 9:00-10:00 AMD2 Oxide TFT: Stability
Special Topics of Interest on Oxide-Semiconductor TFT
10:40-12:05 AMD3 Oxide TFT: Fabrication
Special Topics of Interest on Oxide-Semiconductor TFT
13:10-14:45 AMD4 Oxide TFT: Application
Special Topics of Interest on Oxide-Semiconductor TFT
15:00-18:00 AMDp1 Oxide TFTs
Special Topics of Interest on Oxide-Semiconductor TFT
Exhibition Hall
15:00-18:00 AMDp2 Active-Matrix Devices
Fri., Dec. 8 9:00-10:20 AMD5 Organic / Carbon TFT (1) Tachibana Conference Hall
10:40-11:50 AMD6 Organic / Carbon TFT (2)
13:50-15:20 AMD7 Novel Display Devices
15:30-16:40 AMD8 High Resolution

AMD1 : Oxide TFT: Advanced Devices
Special Topics of Interest on Oxide-Semiconductor TFT

Wed., Dec. 6  13:10-14:15  Tachibana Conference Hall

Chair: H. Kumomi (Tokyo Tech, Japan)
Co-Chair: K. Hayashi (Kobe Steel, Japan)

AMD1-1 Invited Controllable Quantum Interference in Amorphous InGaZnO4 Thin-Film Transistors
W.-H. Wang, S.-R. Lyu, E. Heredia, S.-H. Liu, P.-H. Jiang, P.-Y. Liao*, T.-C. Chang*, H.-M. Chen** (Nat. Taiwan Normal Univ., Taiwan, *Nat. Sun Yat-Sen Univ., Taiwan, **Nat. Chiao Tung Univ., Taiwan)
AMD1-2 Twin-Channel Oxide TFT with High Current Drive and Its Circuit Application
M. Nakata, M. Ochi*, H. Tsuji, T. Takei, M. Miyakawa, T. Yamamoto, H. Goto*, T. Kugimiya*, Y. Fujisaki (NHK, Japan, *Kobe Steel, Japan)
AMD1-3 Simulation Study of Novel Thin-Film Devices Using Depletion State of Amorphous Oxide Semiconductor
K. Abe, M. Fujinaga, T. Kuwagaki (Silvaco Japan, Japan)

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AMD2 : Oxide TFT: Stability
Special Topics of Interest on Oxide-Semiconductor TFT

Thu., Dec. 7  9:00-10:00  Tachibana Conference Hall

Chair: P.-H. Jiang (Nat. Taiwan Normal Univ., Taiwan)
Co-Chair: H. Kumomi (Tokyo Tech, Japan)

AMD2-1 Invited Hydrogen-Induced Trap States in Amorphous In-Ga-Zn-O Thin-Film Transistors Studied by Photoinduced Transient Spectroscopy
K. Hayashi, M. Ochi, A. Hino, H. Goto, T. Kugimiya (Kobe Steel, Japan)
AMD2-2 AlO Sputtered Self-Aligned Source/Drain Formation Technology for Highly Reliable Oxide Thin Film Transistor Backplane
H. Hayashi, A. Murai, M. Miura, Y. Terai, Y. Oshima, T. Saitoh, Y. Hiromasu, T. Arai (JOLED, Japan)
AMD2-3L Slot-Die Coating of Soluble Metal Oxide Semiconductor Towards High-Performance, High-Resolution Self-Aligned TFT Backplanes
I. Katsouras*, M. Marinkovic**, J. Maas*, D.-V. Pham**, R. Anselmann**, G. Gelinck*'*** (*Holst Ctr., The Netherlands, **Evonik Resource Efficiency, Germany, ***Eindhoven Univ. of Tech., The Netherlands)

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AMD3 : Oxide TFT: Fabrication
Special Topics of Interest on Oxide-Semiconductor TFT

Thu., Dec. 7  10:40-12:05  Tachibana Conference Hall

Chair: H. J. Shin (LG Display, Korea)
Co-Chair: H. Hamada (Kinki Univ., Japan)

AMD3-1 Invited Oxide TFT Fabrication Techniques for Advanced Flexible Display Backplanes
J. W. Na, H. J. Kim, B. H. Kang, H. J. Kim (Yonsei Univ., Korea)
AMD3-2 Direct Photoreactive Patterning Method for Fabricating Aqueous Solution-Processed IGZO TFTs
M. Miyakawa, M. Nakata, H. Tsuji, Y. Fujisaki (NHK, Japan)
AMD3-3 Study on the Dry Etching Characteristics of Back Channel Etch Type IGZO TFTs
Z. R. Li, Q. Zhang, M. Lu, Y. Deng, J. Yao, S. Qin (Shenzhen China Star Optoelect. Tech., China)
AMD3-4 Enhanced Scalability and Reliability of Indium-Gallium-Zinc Oxide Thin-Film Transistor Using a Combination of Plasma Fluorination and Thermal Oxidization
L. Lu*, J. Li, Z. Xia, Z. Feng, S. Wang, S. Bebiche, H. S. Kwok*, M. Wong (Hong Kong Univ. of S&T, Hong Kong, *HKUST Jockey Club Inst. for Advanced Study, Hong Kong)

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AMD4 : Oxide TFT: Application
Special Topics of Interest on Oxide-Semiconductor TFT

Thu., Dec. 7  13:10-14:45  Tachibana Conference Hall

Chair: H. J. Kim (Yonsei Univ., Korea)
Co-Chair: K. Omoto (Apple, Japan)

AMD4-1 Invited Novel High-Image-Quality Technologies for Premium OLED TVs
H.-J. Shin, S. Takasugi, J.-M. Kim, C.-H. Oh (LG Display, Korea)
AMD4-2 Withdrawn
AMD4-3 Invited Novel Driving Circuit for High Resolution IGZO TFT Display
K. Yamamoto, K. Tanaka, K. Okada, K. Yamamoto, S. Uchida, H. Katoh, A. Oda, T. Karahashi, T. Matsuo (Sharp, Japan)
AMD4-4 Design of Highly Reliable Depletion-Mode a-IGZO TFT Gate Driving Circuit for 85-in. 8K4K 120 Hz TFT-LCD
L.-Q. Shi, S.-J. Chen, Y.-F. Chou, M. Zeng, T.-H. Wang, P.-J. Chiang, L.-M. Zeng, R.-L. Chen, C.-W. Liao, X.-W. Lv, W.-Y. Li, C.-Y. Chiu, C.-Y. Lee (Shenzhen China Star Optoelect. Tech., China)
AMD4-5L Fully Printed Oxide TFTs for Display Backplane and Logic Circuits
L. Lan, Y. Li, J. Peng (South China Univ. of Tech., China)

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AMD5 : Organic / Carbon TFT (1)

Fri., Dec. 8  9:00-10:20  Tachibana Conference Hall

Chair: T. Minami (Univ. of Tokyo, Japan)
Co-Chair: H. Minemawari (AIST, Japan)

AMD5-1 Invited Stable Low Voltage Solution Processed Organic Field Effect Transistors
X. Guo, W. Tang, J. Zhao, Q. Li, L. Feng (Shanghai Jiao Tong Univ., China)
AMD5-2 Invited Improving Charge Carrier Mobility and Operation Frequency in Polymer Transistors
A. Perinot*, M. Giorgio*'**, P. Colpani*, Y.-H. Kim***, M. Caironi* (*Istituto Italiano di Tecnologia, Italy, **Politecnico di Milano, Italy, ***Gyeongsang Nat. Univ., Korea)
AMD5-3 Withdrawn
AMD5-4L Enhanced Mobility of Top-Gate Dialkyl BTBT Transistors by Spin Coating from Non-Halogen Solvents
S. Sanda*, T. Nagase*, T. Kobayashi*, K. Takimiya**'***, Y. Sadamitsu****, H. Naito* (*Osaka Pref. Univ., Japan, **RIKEN, Japan, ***Tohoku Univ., Japan, ****Nippon Kayaku, Japan)
AMD5-5L Inkjet-Printed Short-Channel Thin-Film Transistors
Y. Li, L. Lan, J. Peng (South China Univ. of Tech., China)

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AMD6 : Organic / Carbon TFT (2)

Fri., Dec. 8  10:40-11:50  Tachibana Conference Hall

Chair: K. Nomoto (Sony, Japan)
Co-Chair: Y. Fujisaki (NHK, Japan)

AMD6-1 Invited Vertical Organic Light Emitting Transistors for Large Screen AMOLED Displays
B. Liu*'**, M. A. McCarthy*'**, X. Chen*, D. J. Cheney*'**, M. G. Lemaitre*'**, R. Jayaraman*, S. Vasilyeva*'**, A. G. Rinzler* (*Univ. of Florida, USA, **nVerpix, USA)
AMD6-2 Active-Matrix LED Display Using Solution-Processed Single-Crystal Organic TFTs for Large-Area Flexible Displays
M. Sawamoto*, S. Suzuki*'**, M. Ikawa*'***, K. Ueji***, T. Matsumuro*'***, M. Ito*, Y. Ohyama***, Y. Tanaka***, Y. Kanaoka****, M. Uno****, J. Takeya*'**'*** (*Pi-Crystal, Japan, **Organo-Circuit, Japan, ***Univ. of Tokyo, Japan, ****Osaka Res. Inst. of Ind. S&T, Japan)
AMD6-3 Invited Label-Free and Antibody-Free Protein Detection Based on Organic TFTs
T. Minami (Univ. of Tokyo, Japan)

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AMD7 : Novel Display Devices

Fri., Dec. 8  13:50-15:20  Tachibana Conference Hall

Chair: K. Kimura (Sony, Japan)
Co-Chair: M. Inoue (Huawei Tech. Japan, Japan)

AMD7-1 Invited Nanocarbon Based Light Sources and Detectors for Integrated Optoelectronics
H. Maki*'** (*Keio Univ., Japan, **JST PRESTO, Japan)
AMD7-2 Invited Monolithically Integrated Supercapacitors and Electorolyte-Gated Transistors
F. Soavi, C. Santato* (Univ. di Bologna, Italy, *Polytechnique Montréal, Canada)
AMD7-3 Techniques in Pixel and Peripheral Circuit Design to Achieve High PPI in AMOLED Display
Y. Song, H. Zhu, X. Zhu, X. Huang (Kunshan Govisionox Optoelect., China)
AMD7-4 Invited Pulse I-V Approach for Quantitative Analysis of Defects and Charge Trapping in Amorphous Oxide Semiconductor Thin Film Transistor
S. Jeon (Korea Univ., Korea)

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AMD8 : High Resolution

Fri., Dec. 8  15:30-16:40  Tachibana Conference Hall

Chair: C. Santato (Polytechnique Montréal, Canada)
Co-Chair: K. Takatori (Tianma Japan, Japan)

AMD8-1 Invited New Pixel Driving Circuit Using Self-Discharging Compensation Method for High-Resolution OLED Microdisplays on a Silicon Backplane
K. Kimura, T. Tanaka, N. Toyomura*, H. Kitagawa* (Sony, Japan, *Sony Semiconductor Solutions, Japan)
AMD8-2 Invited Magneto-Optical Spatial Light Modulator Driven by Spin Transfer Switching for Electronic Holography
N. Funabashi, H. Kinjo, K. Aoshima, D. Kato, T. Usui, S. Aso, K. Kuga, T. Mishina, K. Machida, T. Ishibashi*, H. Kikuchi (NHK, Japan, *Nagaoka Univ. of Tech., Japan)
AMD8-3 New Pixel Circuit with Current-Bias Voltage-Programmed Structure to Fast Compensate for Threshold Voltage Variations of LTPS TFTs for AMOLED Displays
L.-R. Chen, C.-M. Lu, M.-Y. Deng, Y.-S. Lin, C.-L. Lin (Nat. Cheng Kung Univ., Taiwan)

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Poster AMDp1 : Oxide TFTs
Special Topics of Interest on Oxide-Semiconductor TFT

Thu., Dec. 7  15:00-18:00  Exhibition Hall

AMDp1-1 Achieving High Carrier Mobility in IGZO Transistors by Catalytic Metal Assisted Crystallization
Y. Shin, J. Lee, J. K. Jeong (Hanyang Univ., Korea)
AMDp1-2 Soluble-Processed Aluminum Doped Yttrium Oxide Gate Insulator for High Performance Amorphous Oxide Transistors
J. Lee, Y. Shin, J. K. Jeong (Hanyang Univ., Korea)
AMDp1-3 31-in. 4K2K AMOLED Display Using High Thermal Stability and Reliability Top-Gate Self-Aligned IGZO TFTs
X.-Y. Zhou, L. Sun, F.-M. Liu, Y.-J. Hsu, M.-J. Yu, Z.-S. Liu, X. Xiao, J.-S. Im, P.-Y. Lu (Shenzhen China Star Optoelect. Tech., China)
AMDp1-4 Withdrawn
AMDp1-5 Withdrawn
AMDp1-6 Development of Self-Aligned Top-Gate a-IGZO TFTs for a 31-in. 4K2K AMOLED Display
S.-M. Ge, S. Li, X.-Y. Kong, M. Jiang, Y.-H. Meng, W. Shi, W. Wu, F. Zhu, Y. Wu, G.-T. Li, X. Wang, S.-J. Chen, X. Xiao, P.-F. Liang, G. Chaw, C.-Y. Lee (Shenzhen China Star Optoelect. Tech., China)
AMDp1-7 Low Cost Back-Channel-Etch InGaZnO Thin Film Transistors with Cu/Mo Bus Line Fabricated by a 4-Mask Process
F. Zhu, S. Li, G. Li, Y. Wu, Y. Meng, W. Wu, S. Ge, X. Kong, S. Chen, J. Li, F. Wang (Shenzhen China Star Optoelect. Tech., China)
AMDp1-8 Moisture Dominant Electrical Degradation of Amorphous InGaZnO Thin Film Transistors under Positive Bias Stress
Y. Zhou, J. Xu, H. Xie, L. Zhang, G. Liu, X. Tong, C. Dong (Shanghai Jiao Tong Univ., China)
AMDp1-9 Development of 31-in. UD AM-OLED Display Using Self-Aligned Top Gate IGZO TFTs
Y. Meng, S. Li, S. Ge, X. Kong, C. Jiang, W. Shi, W. Wu, F. Zhu, X. Xiao, G. Chaw, P. Liang, Y. Deng, S. Chen, C. Y. Lee (Shenzhen China Star Optoelect. Tech., China)
AMDp1-10 IGZO TFT Gate Driver Circuit Capable of Ripple Control without QB Node
J. Oh, J.-H. Kim, H. Lim, K. C. Park*, D. Jung, Y.-S. Kim (Sungkyunkwan Univ., Korea, *Konkuk Univ., Korea)
AMDp1-11 Withdrawn
AMDp1-12 Characteristics of a-IGZO TFT Stability by Dry Etching
J. Choi, S. Kim, H. Kim, S. M. Cho (Sungkyunkwan Univ., Korea)
AMDp1-13L Development of 65-in. 4K UHD OLED TV with High Reliability and Short Channel IGZO TFTs
J. S. Koo, D. H. Lee, S. J. Yun, W. C. Jeong, J. Y. Park, J. W. Kim (LG Display, Korea)
AMDp1-14L Fabrication of Low Temperature Process TFT Using High Density a-InGaZnO Film Deposited by Inductively Coupled Plasma Sputtering System
D. Matsuo, R. Miyanaga*, S. Kishida, Y. Setoguchi, Y. Andoh, M. Fujii*, Y. Uraoka* (Nissin Elec., Japan, *NAIST, Japan)
AMDp1-15L Characteristic Evaluation of Ga-Sn-O Thin Films by Hall Measurement
K. Imanishi, A. Fukawa, T. Matsuda, M. Kimura (Ryukoku Univ., Japan)

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Poster AMDp2 : Active-Matrix Devices

Thu., Dec. 7  15:00-18:00  Exhibition Hall

AMDp2-1 Reduction of Leakage Current for poly-Si TFTs with Metal Source/Drain by Dual Gate Structure
F. Gakiya, T. Harada, Y. Ishiki, T. Okada, T. Noguchi (Univ. of the Ryukyus, Japan)
AMDp2-2 Electrical Degradation Behavior of p-Type LTPS TFT for Flexible AMOLED Applications
F.-H. Chen, Y.-Y. Wu, S.-L. Lin, C.-H. Tsai, H.-H. Lu, Y.-H. Lin (AU Optronics, Taiwan)
AMDp2-3 High Mobility LTPS TFTs with 150 nm Polysilicon on the Glass Using BLA Crystallization
S. Hong, Y. Jung, J. Jang (Kyung Hee Univ., Korea)
AMDp2-4 Withdrawn
AMDp2-5 Factor Analysis and Evaluation Method for Crosstalk Capability of LTPS LCD
H. Zhou, X. Zhou, B. Shen, J. Li (Xiamen Tianma Microelect., China)
AMDp2-6 Special-Shaped Display Device with High Screen Occupation Ratio
X. Wu, B. Liu, Z. Li, M. Bai, G. Chen, J. Li, Z. Zeng (Xiamen Tianma Microelect., China)
AMDp2-7 Withdrawn
AMDp2-8 Study the Characteristics of a-Si:H Thin Film Transistors by Covering with Different Materials
W.-Y. Li, Y.-F. Chou, P.-J. Chiang, C.-W. Liao, X.-D. Liu, L.-Q. Shi, R.-L. Chen, S.-J. Chen, L.-M. Zeng, T.-H. Wang, X.-W. Lv, C.-Y. Lee (Shenzhen China Star Optoelect. Tech., China)
AMDp2-9 New Integrated EM Driver Using LTPS TFTs in AMOLED Displays
J. Wu, H. Zhu, S. Hu, X. Zhu, X. Huang (Kunshan Govisionox Optoelect., China)
AMDp2-10 Short-Channel Pentacene Thin-Film Transistor Circuits Patterned by Lift-Off Process Using PVA and SU-8
M. S. Kim, J. Oh, S. Y. Lee, K.-C. Park*, J.-H. Jeon**, Y.-S. Kim (Sungkyunkwan Univ., Korea, *Konkuk Univ., Korea, **Korea Aerospace Univ., Korea)
AMDp2-11 Analysis of Unusual Large Current after Reliability Test in 55-in. UD TFT-LCD TV with a-Si Integrated Gate Driver Circuit
L. Zeng, S. Chen, Y. Chou, X. Lv (Shenzhen China Star Optoelect. Tech., China)
AMDp2-12 Evaluation of Thin-Film Phototransistors Arrayed for a Magnifying Viewer
I. Ogawa, S. Kitajima, M. Kimura (Ryukoku Univ., Japan)
AMDp2-13 Application of Film Filter in Embedded Luminance Sensors
S.-B. Liu, Y. Qiao, C.-M. Yu, M.-H. Pan, C.-T. Liao, H.-C. Lai, T.-C. Chung (InfoVision Optoelect., China)
AMDp2-14L Double-Gate P-ch Cu-MIC Low-Temperature Poly-GeSn TFTs on Glass Substrates
N. Nishiguchi, R. Miyazaki, K. Ogata, R. Kuroda, Y. Takano, H. Utsumi, A. Hara (Tohoku Gakuin Univ., Japan)
AMDp2-15L Hybrid Compensation Method for AMOLED Pixel Circuit
C. Nie, B. Han, Y. Cai, X. Wu, G. Chaw (Shenzhen China Star Optoelect. Tech., China)

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